TITLE

GaN stripes on vertical {111} fin facets of (110)-oriented Si substrates

AUTHOR(S)
Kuryatkov, V. V.; Feng, W.; Pandikunta, M.; Woo, J. H.; Garcia, D.; Harris, H. R.; Nikishin, S. A.; Holtz, M.
PUB. DATE
February 2010
SOURCE
Applied Physics Letters;2/15/2010, Vol. 96 Issue 7, p073107
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Selective sidewall epitaxy of AlN/GaN is reported on vertical fins of silicon using metallorganic vapor phase epitaxy. Silicon (110) wafers are structured to form fins with {111} sidewall facets. AlN buffer layers are grown with uniform thickness on vertical {111} surfaces, followed by GaN which grows selectively on the AlN to form the sidewall fin structures. Raman measurements of the GaN show very narrow line widths, consistent with excellent material quality. Spatial dependence from microcathodoluminescence mapping of the GaN band gap emission shows compressive strain in the GaN relaxes closer to the fin corners.
ACCESSION #
48199542

 

Related Articles

  • Oxygen Ion Irradiation on AlGaN/GaN heterostructure grown on Silicon substrate by MOCVD method. Ramesh, R.; Arivazhagan, P.; Balaji, M.; Asokan, K.; Baskar, K. // AIP Conference Proceedings;2015, Vol. 1665, p1 

    In the present work, we have reported 100 MeV O7+ ion irradiation with 1x1012 and 5x1012 ions/cm² fluence on AlGaN/GaN heterostructures grown on silicon substrate by Metal Organic Chemical Vapour Deposition (MOCVD). The Irradiated samples were characterized by High Resolution X-Ray...

  • High brightness InGaN-based yellow light-emitting diodes with strain modulation layers grown on Si substrate. Zhang, Jianli; Xiong, Chuanbing; Liu, Junlin; Quan, Zhijue; Wang, Li; Jiang, Fengyi // Applied Physics A: Materials Science & Processing;Mar2014, Vol. 114 Issue 4, p1049 

    InGaN-based multiple quantum wells (MQWs) yellow light-emitting diodes (LEDs) were grown on Si substrate by metal organic vapor deposition. Blue MQWs were introduced as strain modulation layers for yellow MQWs. The LED chips emitted 72-mW yellow light with 566-nm dominant wavelength and 9.4 %...

  • Modeling GaN nanowire growth on silicon. Dubrovskii, V.; Timofeeva, M. // Technical Physics Letters;Jan2013, Vol. 39 Issue 1, p127 

    We have developed a kinetic theory of the growth of self-induced GaN nanowires (NWs) in the vertical and lateral directions on substrates with amorphous sublayers. A model is constructed that can describe temporal evolution of the NW length and radius. The results of model calculations are...

  • Impact of substrate nitridation on the photoluminescence and photovoltaic characteristics of GaN grown on p-Si (100) by molecular beam epitaxy. Bhat, Thirumaleshwara; Rajpalke, Mohana; Roul, Basanta; Kumar, Mahesh; Krupanidhi, S. // Journal of Materials Science: Materials in Electronics;Sep2013, Vol. 24 Issue 9, p3371 

    This report focuses on the structural and optical properties of the GaN films grown on p-Si (100) substrates along with photovoltaic characteristics of GaN/p-Si heterojunctions fabricated with substrate nitridation and in absence of substrate nitridation. The high resolution X-ray diffraction...

  • Effect of sapphire substrate orientation on the surface morphology and structural quality of thick GaN layers grown by hydride vapor phase epitaxy. Donskov, A.; Dyakonov, L.; Kozlova, Yu.; Malakhov, S.; Mezhennyi, M.; Pavlov, V.; Yugova, T. // Crystallography Reports;Mar2011, Vol. 56 Issue 2, p274 

    The effect of substrate orientation on the surface orientation of thick GaN layers grown by hydride vapor phase epitaxy (HVPE) has been established. Layers oriented along the (0001), (11 $$ \bar 2 $$0), and (10 $$ \bar 1 $$3) planes have been obtained on, respectively, c- and a-, r-, and...

  • Characterization of GaN nanowires grown on PSi, PZnO and PGaN on Si (111) substrates by thermal evaporation. Shekari, Leila; Hassan, Haslan Abu; Thahab, Sabah M.; Hassan, Zainuriah // AIP Conference Proceedings;6/21/2012, Vol. 1454 Issue 1, p256 

    In this research, we used an easy and inexpensive method to synthesize highly crystalline GaN nanowires (NWs); on different substrates such as porous silicon (PSi), porous zinc oxide (PZnO) and porous gallium nitride (PGaN) on Si (111) wafer by thermal evaporation using commercial GaN powder...

  • Comparison of the properties of GaN grown on complex Si-based structures. Zhou, S. Q.; Vantomme, A.; Zhang, B. S.; Yang, H.; Wu, M. F. // Applied Physics Letters;2/21/2005, Vol. 86 Issue 8, p081912 

    The article states that due to the potential integration of microelectronics and optoelectronics, the growth of Gallium nitride (GaN) on silicon (Si) substrates attracts a lot of attention. A major challenge in the growth of GaN on Si is the large mismatch of the in-plane thermal expansion...

  • Single step process for epitaxial lateral overgrowth of GaN on SiC and sapphire substrates. Smart, J. A.; Chumbes, E. M. // Applied Physics Letters;12/13/1999, Vol. 75 Issue 24, p3820 

    Develops a process which produces epitaxial lateral overgrowth of gallium nitride-base materials directly on silicon chloride and sapphire substrates patterned with silicon nitride. Use of a high temperature aluminum gallium nitride nucleation layer; Elimination of the need for regrowth; Smooth...

  • Influence of the nitridation time after the Al pre-seeded layer on the properties of GaN layer grown on Si (111). Dongguo Zhang; Zhonghui Li; Daqing Peng; Xun Dong // Advanced Materials Research;2014, Issue 887-888, p446 

    The epitaxial growth of Gallium Nitride (GaN) on 2 inch Si (111) substrates was investigated, and it was found that by inserting a surface nitridation layer prior to Aluminum Nitride (AlN) nucleation upon substrate, the discoid defects and cracks on the surface were suppressed. Furthermore,...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics