TITLE

Improvement of reproducible resistance switching in polycrystalline tungsten oxide films by in situ oxygen annealing

AUTHOR(S)
Shang, D. S.; Shi, L.; Sun, J. R.; Shen, B. G.; Zhuge, F.; Li, R. W.; Zhao, Y. G.
PUB. DATE
February 2010
SOURCE
Applied Physics Letters;2/15/2010, Vol. 96 Issue 7, p072103
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The electric-field-induced resistance switching in polycrystalline tungsten oxide films was investigated. Compared with the as-deposited film, the film annealed in an oxygen atmosphere shows a more stable switching behavior, a higher low-to-high resistance ratio, and a better endurance and retention. Based on the x-ray photoemission spectroscopy analysis, the resistance switching was attributed to the change in the interfacial barrier potential, due to the electron trapping/detrapping in the surface states, and the switching improvement was attributed to the decrease in the surface density of states. The present work suggests a possible approach controlling the resistance switching property by surface modification.
ACCESSION #
48199535

 

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