Improvement of reproducible resistance switching in polycrystalline tungsten oxide films by in situ oxygen annealing

Shang, D. S.; Shi, L.; Sun, J. R.; Shen, B. G.; Zhuge, F.; Li, R. W.; Zhao, Y. G.
February 2010
Applied Physics Letters;2/15/2010, Vol. 96 Issue 7, p072103
Academic Journal
The electric-field-induced resistance switching in polycrystalline tungsten oxide films was investigated. Compared with the as-deposited film, the film annealed in an oxygen atmosphere shows a more stable switching behavior, a higher low-to-high resistance ratio, and a better endurance and retention. Based on the x-ray photoemission spectroscopy analysis, the resistance switching was attributed to the change in the interfacial barrier potential, due to the electron trapping/detrapping in the surface states, and the switching improvement was attributed to the decrease in the surface density of states. The present work suggests a possible approach controlling the resistance switching property by surface modification.


Related Articles

  • Fabrication of nanoporous tungsten oxide by galvanostatic anodization. Mukherjee, Niloy; Paulose, Maggie; Varghese, Oomman K.; Mor, G. K.; Grimes, Craig A. // Journal of Materials Research;Oct2003, Vol. 18 Issue 10, p2296 

    Nanoporous tungsten oxide (WO[sub3]), with pores of 50 to 100 nm in diameter, has been obtained by galvanostatic (constant-current) anodization of tungsten in a 0.25 M oxalic acid electrolyte. At room temperature, the optimum current density for nanoporous formation is approximately 6.5 to 8...

  • Enhancement of Schottky barrier height on AlGaN/GaN heterostructure by oxidation annealing. Jeon, Chang Min; Lee, Jong-Lam // Applied Physics Letters;6/16/2003, Vol. 82 Issue 24, p4301 

    The effect of preannealing of AlGaN under an oxygen ambient on the improvement of the Schottky barrier height on an AlGaN/GaN heterostructure was studied using synchrotron radiation photoemission spectroscopy. The oxidation annealing increased the Schottky barrier height from 0.59 to 0.84 eV,...

  • Annealing effects on electrical properties of MgZnO films grown by pulsed laser deposition. Polyakov, A. Y.; Smirnov, N. B.; Govorkov, A. V.; Kozhukhova, E. A.; Belogorokhov, A. I.; Kim, H. S.; Norton, D. P.; Pearton, S. J. // Journal of Applied Physics;Apr2008, Vol. 103 Issue 8, p083704 

    Electrical properties and deep trap spectra are reported for MgZnO(P) films grown by pulsed laser deposition on undoped n-ZnO substrates. The as-grown films are n type with a “bulk” donor concentration of ∼1018 cm-3 and have a compensated high resistivity layer near the surface....

  • Annealing effects on interfacial electronic structures and photoexcitation kinetics of regioregular poly(3-hexylthiophene) film on gold. Sohn, Youngku; Stuckless, J. Todd // Applied Physics Letters;4/23/2007, Vol. 90 Issue 17, p171901 

    The authors have studied annealing effects on the interfacial electronic structures and long-lived photoexcitation kinetics of poly(3-hexylthiophene-2,5-diyl) (P3HT) on gold, in comparison with poly[2-methoxy-5-(2′-ethyl-hexyloxy)-1,4-phenylene vinylene], using two-photon photoemission...

  • Transient photoconductivity properties of tungsten oxide thin films prepared by spray pyrolysis. Hao, Jianhua; Studenikin, S. A.; Cocivera, Michael // Journal of Applied Physics;11/15/2001, Vol. 90 Issue 10, p5064 

    Tungsten oxide (WO[sub 3]) thin films were deposited by spray pyrolysis of an ammonium tungsten oxide solution. The effect of postannealing on the structural, transport and optical properties of the films has been studied. Under steady-state illumination, slow photoconductivity growth and...

  • Preparation and aging of sputtered tungstic oxide films. Akram, Hossain; Tatsuoka, Hirokazu; Kitao, Michihiko; Yamada, Shoji // Journal of Applied Physics;9/1/1987, Vol. 62 Issue 5, p2039 

    Focuses on a study that investigated the conditions for the preparation of electrochronic tungstic oxide films with high efficiency for coloration. Methods used to prepare tungstic oxide films; Oxygen content and total pressure of the mixture gas used; Main reason for obtaining high values of...

  • Defect states responsible for leakage current in Ta2O5 films on Si due to Si contamination from the substrate. Lau, W. S.; Khaw, K. K.; Qian, P. W.; Sandler, N. P.; Chu, P. K. // Journal of Applied Physics;6/1/1996, Vol. 79 Issue 11, p8841 

    Presents information on a study that found a defect state in Ta[sub2]O[sub5] after postdeposition annealing in O[sub2] by a novel zero-bias thermally stimulated current spectroscopy technique. Experimental procedure; Results and discussion on the study; Conclusion.

  • Electrical characterization of Er- and Pr-implanted GaN films. Song, S. F.; Chen, W. D.; Chunguang Zhang; Liufang Bian; Hsu, C. C.; Lu, L. W.; Zhang, Y. H.; Jianjun Zhu // Applied Physics Letters;4/11/2005, Vol. 86 Issue 15, p152111 

    Hall, current–voltage, and deep-level transient spectroscopy measurements were used to characterize the electrical properties of metalorganic chemical vapor deposition grown undoped, Er- and Pr-implanted GaN films. Only one deep level located at 0.270 eV below the conduction band was...

  • Annealing-temperature dependence: Mechanism of Hf silicidation in HfO2 gate insulators on Si by core-level photoemission spectroscopy. Toyoda, S.; Okabayashi, J.; Takahashi, H.; Kumigashira, H.; Oshima, M.; Niwa, M.; Usuda, K.; Liu, G. L. // Journal of Applied Physics;1/1/2006, Vol. 99 Issue 1, p014901 

    We have investigated the mechanism of Hf silicidation from HfO2 gate insulators on Si by high-resolution core-level photoemission spectroscopy with detailed annealing-temperature controlling. We have found that the silicidation temperature depends on the difference of the chemical states at the...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics