TITLE

Gate voltage dependence of nuclear spin relaxation in an impurity-doped semiconductor quantum well

AUTHOR(S)
Ono, M.; Kobayashi, H.; Matsuzaka, S.; Ohno, Y.; Ohno, H.
PUB. DATE
February 2010
SOURCE
Applied Physics Letters;2/15/2010, Vol. 96 Issue 7, p071907
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We investigated the gate voltage dependence of the nuclear spin relaxation in a Schottky-gated n-GaAs/AlGaAs (110) quantum well by the time-resolved Kerr rotation measurement combined with the nuclear magnetic resonance technique. The Fermi contact hyperfine interaction is enhanced by decreasing the background electron density, as the electrons become localized at impurity site. The energy relaxation time T1 and the decay time of the Rabi oscillation T2Rabi can be controlled by more than a factor of 10 and a factor of ∼2, respectively.
ACCESSION #
48199531

 

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