Gate voltage dependence of nuclear spin relaxation in an impurity-doped semiconductor quantum well

Ono, M.; Kobayashi, H.; Matsuzaka, S.; Ohno, Y.; Ohno, H.
February 2010
Applied Physics Letters;2/15/2010, Vol. 96 Issue 7, p071907
Academic Journal
We investigated the gate voltage dependence of the nuclear spin relaxation in a Schottky-gated n-GaAs/AlGaAs (110) quantum well by the time-resolved Kerr rotation measurement combined with the nuclear magnetic resonance technique. The Fermi contact hyperfine interaction is enhanced by decreasing the background electron density, as the electrons become localized at impurity site. The energy relaxation time T1 and the decay time of the Rabi oscillation T2Rabi can be controlled by more than a factor of 10 and a factor of ∼2, respectively.


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