TITLE

Thermally formed conducting filaments in a single-crystalline NiO thin film

AUTHOR(S)
Kawai, Masanori; Ito, Kimihiko; Ichikawa, Noriya; Shimakawa, Yuichi
PUB. DATE
February 2010
SOURCE
Applied Physics Letters;2/15/2010, Vol. 96 Issue 7, p072106
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Effects of thermal annealing on resistance switching properties of a single-crystalline NiO thin film grown on a Pt0.8Ir0.2 bottom electrode were investigated. Annealing the NiO thin film above 430 °C produced conducting filaments in the single-crystalline NiO and the resulting low-resistance state changed to a high-resistance state at an electrical reset bias voltage. Rearrangements of crystalline defects such as Ni vacancies play a role in forming the conducting filaments. This “thermal forming” is essentially the same as “electrical forming” but does not need large bias voltages to make the initially ON state in unipolar switching devices.
ACCESSION #
48199524

 

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