Reducing quantum-regime dielectric loss of silicon nitride for superconducting quantum circuits

Paik, Hanhee; Osborn, Kevin D.
February 2010
Applied Physics Letters;2/15/2010, Vol. 96 Issue 7, p072505
Academic Journal
The loss of amorphous hydrogenated silicon nitride (a-SiNx:H) is measured at 30 mK and 5 GHz using a superconducting LC resonator down to energies where a single-photon is stored, and analyzed with an independent two-level system defect model. Each a-SiNx:H film was deposited with different concentrations of hydrogen impurities. We find that quantum-regime dielectric loss tangent tan δ0 in a-SiNx:H is strongly correlated with N–H impurities, including NH2. By slightly reducing x we are able to reduce tan δ0 by approximately a factor of 50, where the best films show tan δ0≃3×10-5.


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