Insight into the performance enhancement of double-gated polycrystalline silicon thin-film transistors with ultrathin channel

Zer-Ming Lin; Horng-Chih Lin; Wei-Chen Chen; Tiao-Yuan Huang
February 2010
Applied Physics Letters;2/15/2010, Vol. 96 Issue 7, p072108
Academic Journal
In this letter, characteristics of independently-controllable double-gated polycrystalline silicon (poly-Si) thin-film transistors (TFTs) with ultrathin channel are characterized and analyzed experimentally and theoretically. As compared with the single-gated mode where only one of the gates is used for driving the device, 1.3–2.1 fold increase in drive current is achieved under double-gated mode as the two gates are biased simultaneously for driving the device. A remarkable lowering of barrier height 7–12 meV in the latter case due to the coupling of the two gate biases is identified as the major origin for such performance enhancement.


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