TITLE

Insight into the performance enhancement of double-gated polycrystalline silicon thin-film transistors with ultrathin channel

AUTHOR(S)
Zer-Ming Lin; Horng-Chih Lin; Wei-Chen Chen; Tiao-Yuan Huang
PUB. DATE
February 2010
SOURCE
Applied Physics Letters;2/15/2010, Vol. 96 Issue 7, p072108
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
In this letter, characteristics of independently-controllable double-gated polycrystalline silicon (poly-Si) thin-film transistors (TFTs) with ultrathin channel are characterized and analyzed experimentally and theoretically. As compared with the single-gated mode where only one of the gates is used for driving the device, 1.3–2.1 fold increase in drive current is achieved under double-gated mode as the two gates are biased simultaneously for driving the device. A remarkable lowering of barrier height 7–12 meV in the latter case due to the coupling of the two gate biases is identified as the major origin for such performance enhancement.
ACCESSION #
48199500

 

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