TITLE

Current deep level transient spectroscopy analysis of AlInN/GaN high electron mobility transistors: Mechanism of gate leakage

AUTHOR(S)
Chikhaoui, W.; Bluet, J.-M.; Poisson, M.-A.; Sarazin, N.; Dua, C.; Bru-Chevallier, C.
PUB. DATE
February 2010
SOURCE
Applied Physics Letters;2/15/2010, Vol. 96 Issue 7, p072107
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
In order to assess possible mechanisms of gate reverse-bias leakage current in AlInN/GaN high electron mobility transistors (HEMTs) grown by metalorganic chemical-vapor deposition on SiC substrates, temperature-dependent current-voltage measurements combined with Fourier transform current deep level transient spectroscopy (FT-CDLTS) are performed in the temperature range of 200–400 K. In this range of temperature reverse-bias leakage current flow is found to be dominated by Poole–Frenkel emission. Based on CDLTS measurements, a model of leakage current transport via a trap state located at the AlInN/metal interface with an activation energy of 0.37 eV is suggested. The trap nature is shown to be an extended trap, most probably associated with dislocations in the AlInN barrier layer.
ACCESSION #
48199498

 

Related Articles

  • Stability of deep centers in 4H-SiC epitaxial layers during thermal annealing. Negoro, Y.; Kimoto, T.; Matsunami, H. // Applied Physics Letters;9/6/2004, Vol. 85 Issue 10, p1716 

    N-type epitaxial 4H-SiC layers grown by hot-wall chemical vapor deposition were investigated with regard to deep centers by capacitance-voltage measurements and deep level transient spectroscopy (DLTS). The DLTS spectra revealed that the concentrations of deep centers were reduced by one order...

  • Discovery of the deep level related to hydrogen in anatase TiO2. Miyagi, Takahira; Kamei, Masayuki; Mitsuhashi, Takefumi; Yamazaki, Atsushi // Applied Physics Letters;3/27/2006, Vol. 88 Issue 13, p132101 

    Deep level transient spectroscopy was carried out to investigate the origin of the deep levels in the band gap of anatase TiO2. The epitaxial anatase-TiO2 film grown by metal-organic chemical vapor deposition possessed a deep level whose activation energy was 0.52 eV. In contrast, this deep...

  • Defect reduction in GaN epilayers grown by metal-organic chemical vapor deposition with in situ SiNx nanonetwork. Xie, Jinqiao; Chevtchenko, Serguei A.; Özgür, Ümit; Morkoç, Hadis // Applied Physics Letters;6/25/2007, Vol. 90 Issue 26, p262112 

    Line and point defect reductions in thin GaN epilayers with single and double in situ SiNx nanonetworks on sapphire substrates grown by metal-organic chemical vapor deposition were studied by deep-level transient spectroscopy (DLTS), augmented by x-ray diffraction (XRD), and low temperature...

  • Growth and characterization of SiC epitaxial layers on Si- and C-face 4H SiC substrates by chemical-vapor deposition. Ramaiah, Kodigala Subba; Bhat, I.; Chow, T. P.; Kim, J. K.; Schubert, E. F.; Johnstone, D.; Akarca-Biyikli, S. // Journal of Applied Physics;11/15/2005, Vol. 98 Issue 10, p106108 

    High-quality Schottky junctions have been fabricated on n-type 4H SiC epitaxial layers grown by chemical-vapor deposition on C- and Si-face substrates in order to understand the effect of growth direction on the growth mechanism and formation of defects. Atomic force microscopy analysis showed...

  • Thermal stability of electron traps in GaN grown by metalorganic chemical vapor deposition. Johnstone, D.; Do&gcaron;an, S.; Leach, J.; Moon, Y.T.; Fu, Y.; Hu, Y.; Morkoç, H. // Applied Physics Letters;11/1/2004, Vol. 85 Issue 18, p4058 

    Deep level transient spectroscopy was used to investigate the thermal stability of electron traps in n-type GaN grown by metalorganic chemical vapor deposition. The concentration of traps at 160 and at 500 K increased more than fivefold over the course of several 700 K anneal cycles, while a...

  • Deep level transient spectroscopy study of defects in hydrogen implanted p-type 4H-SiC. Alfieri, Giovanni; Kimoto, Tsunenobu // Journal of Applied Physics;5/15/2007, Vol. 101 Issue 10, p103716 

    p-type 4H-SiC epitaxial layers grown by chemical vapor deposition have been implanted with 200 and 100 keV protons at five different implantation temperatures. An isochronal annealing series was performed from 100 to 1800 °C, and Al-doped epitaxial layers have been characterized by means of...

  • A deep-level transient spectroscopy study of high electron mobility transistors subjected to lifetime stress tests. Magno, R.; Shelby, R.; Anderson, W. T. // Journal of Applied Physics;12/1/1989, Vol. 66 Issue 11, p5613 

    Examines the effect of accelerated lifetime stress tests on AlGaAs/GaAs high electron mobility transistor (HEMT) structures. Techniques of deep-level transient spectroscopy (DLTS) for obtaining trap information; Diagram of the equipment used to measure capacitance DLTS; Comparison of...

  • Current collapse induced in AlGaN/GaN high-electron-mobility transistors by bias stress. Mittereder, J. A.; Binari, S.C.; Klein, P.B.; Roussos, J.A.; Katzer, D.S.; Storm, D.F.; Koleske, D.D.; Wickenden, A.E.; Henry, R.L. // Applied Physics Letters;8/25/2003, Vol. 83 Issue 8, p1650 

    Current collapse is observed to be induced in AlGaN/GaN high-electron-mobility transistors as a result of short-term bias stress. This effect was seen in devices grown by both metalorganic chemical vapor deposition (MOCVD) and molecular-beam epitaxy (MBE). The induced collapse appears to be...

  • Trap states in enhancement-mode double heterostructures AlGaN/GaN high electron mobility transistors with different GaN channel layer thicknesses. Yunlong He; Peixian Li; Chong Wang; Xiangdong Li; Shenglei Zhao; Minhan Mi; Jiuqing Pei; Jincheng Zhang; Xiaohua Ma; Yue Hao // Applied Physics Letters;8/10/2015, Vol. 107 Issue 6, p063501-1 

    This is the report on trap states in enhancement-mode AlGaN/GaN/AlGaN double heterostructures high electron mobility transistors by fluorine plasma treatment with different GaN channel layer thicknesses. Compared with the thick GaN channel layer sample, the thin one has smaller 2DEG...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics