Morphological stability and specific resistivity of sub-10 nm silicide films of Ni1-xPtx on Si substrate

Zhen Zhang; Shi-Li Zhang; Bin Yang; Yu Zhu; Rossnagel, Stephen M.; Gaudet, Simon; Kellock, Andrew J.; Jordan-Sweet, Jean; Lavoie, Christian
February 2010
Applied Physics Letters;2/15/2010, Vol. 96 Issue 7, p071915
Academic Journal
This letter studies the morphological stability and specific resistivity of sub-10 nm silicide films of Ni, Ni0.95Pt0.05, and Ni0.9Pt0.1 formed on Si(100) substrate. When the deposited metal films are below 1 to 4 nm in thickness depending on the Pt content, the resultant silicide films tend to become epitaxially aligned to the Si substrate and hence exhibit an extraordinary morphological stability up to 800 °C. The presence of Pt in the silicides increases the film resistivity through alloy scattering, but alleviates, owing to a reduced electron mean free path, the frequently encountered sharp increase in resistivity in the sub-10 nm regime.


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