In situ photoemission spectroscopy study on formation of HfO2 dielectrics on epitaxial graphene on SiC substrate

Chen, Q.; Huang, H.; Chen, W.; Wee, A. T. S.; Feng, Y. P.; Chai, J. W.; Zhang, Z.; Pan, J. S.; Wang, S. J.
February 2010
Applied Physics Letters;2/15/2010, Vol. 96 Issue 7, p072111
Academic Journal
High quality HfO2 dielectrics have been grown on epitaxial graphene on 4H-SiC substrates and have been studied by using in situ x-ray photoemission spectroscopy. The in situ thermal treatment shows that the HfO2/graphene/4H-SiC heterojunctions have good thermal stability up to 650 °C. A shift of core-level spectra from graphene layer implies that charge transfer takes place at the interface. The high thermal stability and sufficient barrier heights between HfO2 and graphene indicate that high-k dielectric grown on graphene is very promising for the development of graphene-based electronic devices.


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