Effect of Ge passivation on interfacial properties of crystalline Gd2O3 thin films grown on Si substrates

Laha, Apurba; Fissel, A.; Osten, H. J.
February 2010
Applied Physics Letters;2/15/2010, Vol. 96 Issue 7, p072903
Academic Journal
The incorporation of few monolayers of Ge chemisorbed on Si surface has been found to have significant impact on the electrical properties of crystalline Gd2O3 grown epitaxially on Si substrates. Although the Ge coverage on Si surface does not show any influence on the epitaxial quality of Gd2O3 layers, however, it exhibits a strong impact on their electrical properties. We show that by incorporating few monolayers of Ge at the interface between Gd2O3 and Si, the capacitance-voltage characteristics, fixed charge and density of interface traps of Pt/Gd2O3/Si capacitor are much superior to those layers grown on clean Si surfaces.


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