TITLE

Effect of Ge passivation on interfacial properties of crystalline Gd2O3 thin films grown on Si substrates

AUTHOR(S)
Laha, Apurba; Fissel, A.; Osten, H. J.
PUB. DATE
February 2010
SOURCE
Applied Physics Letters;2/15/2010, Vol. 96 Issue 7, p072903
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The incorporation of few monolayers of Ge chemisorbed on Si surface has been found to have significant impact on the electrical properties of crystalline Gd2O3 grown epitaxially on Si substrates. Although the Ge coverage on Si surface does not show any influence on the epitaxial quality of Gd2O3 layers, however, it exhibits a strong impact on their electrical properties. We show that by incorporating few monolayers of Ge at the interface between Gd2O3 and Si, the capacitance-voltage characteristics, fixed charge and density of interface traps of Pt/Gd2O3/Si capacitor are much superior to those layers grown on clean Si surfaces.
ACCESSION #
48199477

 

Related Articles

  • Heteroepitaxial structures of SrTiO3/TiN on Si(100) by in situ pulsed laser deposition. Vispute, R. D.; Narayan, J.; Dovidenko, K.; Jagannadham, K.; Parikh, N.; Suvkhanov, A.; Budai, J. D. // Journal of Applied Physics;12/15/1996, Vol. 80 Issue 12, p6720 

    Examines the dependence of substrate temperature and oxygen partial pressure on the crystalline quality of the SrTiO[sub3] (STO) films on silicon (Si) with epitaxial TiN template. Significance of the epitaxial growth of STO on metallic TiN; Advantages of epitaxial TiN; Analysis of the surface...

  • X-ray spectroscopic examination of thin HfO2 films ALD- and MOCVD-grown on the Si(100) surface. Sokolov, A. A.; Ovchinnikov, A. A.; Lysenkov, K. M.; Marchenko, D. E.; Filatova, E. O. // Technical Physics;Jul2010, Vol. 55 Issue 7, p1045 

    HfO2 films 5 nm thick grown on Si(100) substrates by the methods of MOCVD hydride epitaxy and atomic layer deposition (ALD) are studied using X-ray photoelectron spectroscopy combined with Ar+ ion etching and X-ray reflectometry. It is found that (i) the ALD-grown HfO2 films are amorphous, while...

  • Growth processes in the initial stage of Ge films on (811)Si surfaces by GeH4 source molecular beam epitaxy. Koide, Y.; Zaima, S.; Itoh, K.; Ohshima, N.; Yasuda, Y. // Journal of Applied Physics;9/1/1990, Vol. 68 Issue 5, p2164 

    Studies the growth process in the initial stage of growth of germanium films on silicon substrate surfaces by GeH[sub4] source molecular beam epitaxy. Details on the experiment; Results of the study; Conclusions.

  • Solid phase epitaxy of diamond cubic SnxGe1-x alloys. Taylor, M. E.; He, G.; Atwater, Harry A.; Polman, A. // Journal of Applied Physics;10/15/1996, Vol. 80 Issue 8, p4384 

    Presents information on a study that investigated solid phase epitaxy amorphous Sn[subx]Ge[sub1-x] films on strain relieved germanium films on silicon(001) substrates. Experimental procedure; Results and discussion on the study; Conclusions.

  • Solid phase epitaxy of stressed and stress-relaxed Ge-Si alloys. Hong, Q. Z.; Zhu, J. G.; Mayer, J. W.; Xia, W.; Lau, S. S. // Journal of Applied Physics;2/15/1992, Vol. 71 Issue 4, p1768 

    Investigates the solid phase epitaxy of stressed and stress-relaxed germanium and silicon thin films on silicon substrates. Recrystallization behavior of silicon and germanium alloys; Details on the experiment; Discussion on the results of the experiment.

  • The mechanism of epitaxial Si-Ge/Si heterostructure formation by wet oxidation of amorphous Si-Ge thin films. Prokes, S. M.; Rai, A. K. // Journal of Applied Physics;1/15/1990, Vol. 67 Issue 2, p807 

    Studies the mechanism of epitaxial silicon germanium heterostructure formation by wet oxidation of amorphous silicon germanium (SiGe) thin films. Techniques used in the study of the growth of epitaxial SiGe alloy thin films on silicon; Preparation of the sample used in the study; Discussion on...

  • Heteroepitaxial growth of Ge films on the Si(100)-2×1 surface. Asai, M.; Ueba, H.; Tatsuyama, C. // Journal of Applied Physics;10/1/1985, Vol. 58 Issue 7, p2577 

    Presents a study that investigated the initial stage of the heteroepitaxial growth of germanium thin films on silicon surfaces. Methodology; Analysis of the annealing effect on the epitaxial growth; Examination of the single-crystal growth of germanium on silicon(100) surfaces.

  • Epitaxial growth of Co2MnSi thin films at the vicinal surface of n-Ge(111) substrate. Nahid, M. A. I.; Oogane, M.; Naganuma, H.; Ando, Y. // Applied Physics Letters;4/5/2010, Vol. 96 Issue 14, p142501 

    The structure and magnetic properties of Co2MnSi films on n-Ge(111) substrate were investigated for the motivation of spin injection. The 50-nm-thick Co2MnSi films were fabricated on n-Ge(111) substrates by dc sputtering and postannealed about 1 h at the various temperatures ranging from...

  • New method for growing silicon carbide on silicon by solid-phase epitaxy: Model and experiment. Kukushkin, S. A.; Osipov, A. V. // Physics of the Solid State;Jul2008, Vol. 50 Issue 7, p1238 

    A new method of solid-state epitaxy of silicon carbide (SiC) on silicon (Si) is proposed theoretically and realized experimentally. Films of various polytypes of SiC on Si(111) grow through a chemical reaction (at T = 1100–1400°C) between single-crystal silicon and gaseous carbon oxide...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics