TITLE

Energy level evolution of molybdenum trioxide interlayer between indium tin oxide and organic semiconductor

AUTHOR(S)
Irfan; Huanjun Ding; Yongli Gao; Do Young Kim; Subbiah, Jegadesan; So, Franky
PUB. DATE
February 2010
SOURCE
Applied Physics Letters;2/15/2010, Vol. 96 Issue 7, p073304
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The thickness dependance of molybdenum trioxide (MoO3) interlayer between conducting indium tin oxide (ITO) and chloro-aluminum pthalocyanine (AlPc-Cl) has been investigated with ultraviolet photoemission spectroscopy (UPS) and inverse photoemission spectroscopy. It was found that the MoO3 interlayer substantially increased the surface workfunction (WF). The increase was observed to saturate at 20 Ã… of MoO3 coverage. The increased WF results in hole accumulation and a band-bendinglike situation in the subsequently deposited AlPc-Cl. From these observations, a possible explanation is deduced for the observed reduction in series resistance by the insertion of the MoO3 insulating layer.
ACCESSION #
48199472

 

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