Reduced electric field in junctionless transistors

Colinge, Jean-Pierre; Chi-Woo Lee; Ferain, Isabelle; Akhavan, Nima Dehdashti; Ran Yan; Razavi, Pedram; Ran Yu; Nazarov, Alexei N.; Doria, Rodrigo T.
February 2010
Applied Physics Letters;2/15/2010, Vol. 96 Issue 7, p073510
Academic Journal
The electric field perpendicular to the current flow is found to be significantly lower in junctionless transistors than in regular inversion-mode or accumulation-mode field-effect transistors. Since inversion channel mobility in metal-oxide-semionductor transistors is reduced by this electric field, the low field in junctionless transistor may give them an advantage in terms of current drive for nanometer-scale complementary metal-oxide semiconductor applications. This observation still applies when quantum confinement is present.


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