TITLE

Reduced electric field in junctionless transistors

AUTHOR(S)
Colinge, Jean-Pierre; Chi-Woo Lee; Ferain, Isabelle; Akhavan, Nima Dehdashti; Ran Yan; Razavi, Pedram; Ran Yu; Nazarov, Alexei N.; Doria, Rodrigo T.
PUB. DATE
February 2010
SOURCE
Applied Physics Letters;2/15/2010, Vol. 96 Issue 7, p073510
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The electric field perpendicular to the current flow is found to be significantly lower in junctionless transistors than in regular inversion-mode or accumulation-mode field-effect transistors. Since inversion channel mobility in metal-oxide-semionductor transistors is reduced by this electric field, the low field in junctionless transistor may give them an advantage in terms of current drive for nanometer-scale complementary metal-oxide semiconductor applications. This observation still applies when quantum confinement is present.
ACCESSION #
48199467

 

Related Articles

  • Optical reduction of low frequency noise in cryogenic GaAs junction field effect transistor. Fujiwara, M.; Nagata, H.; Matsuo, H.; Sasaki, M. // Applied Physics Letters;7/28/2008, Vol. 93 Issue 4, p043503 

    We demonstrated optical low frequency noise reduction in a n-type SONY GaAs junction field effect transistor (JFET) (gate width: 5 μm; length: 1 μm) operating at 4.2 K. At 1 Hz, a 6 dB decrease and a 10 dB increase in noise were observed when the JFET (band gap: 1.51 eV) was illuminated by...

  • Field-effect devices utilizing LaAlO3-SrTiO3 interfaces. Förg, B.; Richter, C.; Mannhart, J. // Applied Physics Letters;1/30/2012, Vol. 100 Issue 5, p053506 

    Using LaAlO3-SrTiO3 bilayers, we have fabricated field-effect devices that utilize the two-dimensional electron liquid generated at the bilayers' n-type interfaces as drain-source channels and the LaAlO3 layers as gate dielectrics. With gate voltages well below 1 V, the devices are characterized...

  • A model for visible photon emission from reverse-biased silicon p-n junctions. Obeidat, Amjad T.; Kalayjian, Zaven // Applied Physics Letters;1/27/1997, Vol. 70 Issue 4, p470 

    Presents a model for visible electroluminescence from reverse-biased silicon p-n junctions and from n- and p-type field-effect transistors. Measurement of the spectra of over 40 junctions and devices; Methods used to explain the observed electroluminescence spectrum; Agreement of the model's...

  • Analysis of an anomalous hump in gate current after dynamic negative bias stress in HfxZr1-xO2/metal gate p-channel metal-oxide-semiconductor field-effect transistors. Ho, Szu-Han; Chang, Ting-Chang; Wu, Chi-Wei; Lo, Wen-Hung; Chen, Ching-En; Tsai, Jyun-Yu; Luo, Hung-Ping; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Sze, Simon M. // Applied Physics Letters;7/30/2012, Vol. 101 Issue 5, p052105 

    This letter investigates a hump in gate current after dynamic negative bias stress (NBS) in HfxZr1-xO2/metal gate p-channel metal-oxide-semiconductor field-effect transistors. By measuring gate current under initial through body floating and source/drain floating, it shows that hole current...

  • RTS in Submicron MOSFETs: Lateral Field Effect and Active Trap Position. Sikula, J.; Sedlakova, V.; Chvatal, M.; Pavelka, J.; Tacano, M.; Toita, M. // AIP Conference Proceedings;4/23/2009, Vol. 1129 Issue 1, p205 

    Experiments were carried out for n-channel devices, processed in a 0.3 μm spacerless CMOS technology. The investigated devices have a gate oxide thickness of 6 nm and the effective interface area is AG = 1.5 μm2. The RTS measurements were performed for constant gate voltage, where the...

  • Gate tunneling current in In[sub 0.53]Ga[sub 0.47]As junction field-effect transistors. Lo, D.C.W.; Chung, Y.K. // Applied Physics Letters;3/30/1992, Vol. 60 Issue 13, p1588 

    Investigates the source of gate current leakage in In[sub 0.53]Ga[sub 0.47]As junction field-effect transistors. Influence of band-to-band tunneling leakage current on gate current leakage; Dependence of leakage current on temperature and voltage; Optimization of the device for use in...

  • Back bias effects on two-dimensional electron gas. Schuermeyer, Fritz L.; Grzyb, Joseph A.; Curtis, Michael J.; Paulus, Michael J.; Cheney, Michael E. // Journal of Applied Physics;2/15/1988, Vol. 63 Issue 4, p1121 

    Presents a technique in studying heterostructure field-effect transistors. Measurement of current-voltage; Characteristics of field-effect transistors; Correlation between change in performance and charge confinement.

  • Silicon field-effect transistor based on quantum tunneling. Tucker, J.R.; Chinlee Wang // Applied Physics Letters;8/1/1994, Vol. 65 Issue 5, p618 

    Examines the regulation of current flow within a silicon field-effect transistor by gate-induced tunneling. Details of the sketch of tunneling metal-oxide-semiconductor field-effect transistors structure with Schottky barrier contacts; Induction of internal field emission through the Schottky...

  • Graded-base InGaN/GaN heterojunction bipolar light-emitting transistors. Chu-Kung, B. F.; Feng, M.; Walter, G.; Holonyak, Jr., N.; Chung, T.; Ryou, J.-H.; Limb, J.; Yoo, D.; Shen, S.-C.; Dupuis, R. D.; Keogh, D.; Asbeck, P. M. // Applied Physics Letters;8/21/2006, Vol. 89 Issue 8, p082108 

    The authors report radiative recombination from a graded-base InGaN/GaN heterojunction bipolar transistor (HBT) grown by metal-organic chemical vapor deposition on sapphire. For a device with a 40×40 μm2 emitter area, a differential dc current gain of 15 is measured from the...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics