Optical metastability of subband gap (2.2 eV) yellow luminescence in GaN

Chang, Y. C.; Oberhofer, A. E.; Muth, J. F.; Kolbas, R. M.; Davis, R. F.
July 2001
Applied Physics Letters;7/16/2001, Vol. 79 Issue 3
Academic Journal
Optical metastability has been studied in undoped GaN films grown on SiC substrates having a previously deposited AlN buffer layer. Brief exposures to a higher intensity ultraviolet light resulted in temporary changes in the optical properties of the GaN layer. The photoinduced changes created high contrast patterns on samples that could be observed under an optical microscope with lower intensity ultraviolet excitation. The subband gap yellow photoluminescence peak at 2.2 eV increased significantly after the patterns were created. This change slowly returned (hours) to its initial value at room temperature. The retention time decreased to a few seconds at temperatures above 100 °C. The data showed that a 1.34 eV thermal activation energy exists, which suggests that the cause of these metastable properties is related to the subband gap yellow luminescence. © 2001 American Institute of Physics.


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