Er[sup 3+] photoluminescence properties of erbium-doped Si/SiO[sub 2] superlattices with subnanometer thin Si layers

Ha, Yong Ho; Kim, Sehun; Moon, Dae Won; Jhe, Ji-Hong; Shin, Jung H.
July 2001
Applied Physics Letters;7/16/2001, Vol. 79 Issue 3
Academic Journal
The effect of the Si layer thickness on the Er[sup 3+] photoluminescence properties of the Er-doped Si/SiO[sub 2] superlattice is investigated. We find that the Er[sup 3+] luminescence intensity increases by over an order of magnitude as the Si layer thickness is reduced from 3.6 nm down to a monolayer of Si. Temperature dependence of the Er[sup 3+] luminescence intensity and time-resolved measurement of Er[sup 3+] luminescence intensity identify the increase in the excitation rate as the likely cause for such an increase, and underscore the importance of the Si/SiO[sub 2] interface in determining the Er[sup 3+] luminescence properties. © 2001 American Institute of Physics.


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