TITLE

Physical properties of N[sub 2]O and NO-nitrided gate oxides grown on 4H SiC

AUTHOR(S)
Jamet, P.; Dimitrijev, S.
PUB. DATE
July 2001
SOURCE
Applied Physics Letters;7/16/2001, Vol. 79 Issue 3
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
N[sub 2]O and NO nitridation by either annealing or direct growth of gate oxides on 4H SiC is analyzed in this letter. The analysis is based on x-ray photoelectron spectroscopy binding energies and secondary ion mass spectroscopy depth profiles of nitrogen at the SiO[sub 2]–SiC interface. A clean SiO[sub 2]–SiC interface is found in both NO and N[sub 2]O annealed/grown samples, as opposed to the interface annealed in Ar which exhibits complex suboxides and oxide–carbon compounds. The results demonstrate that nitridation in the industry-preferred N[sub 2]O ambient could be as effective as nitridation in NO, provided appropriate process optimization is performed. © 2001 American Institute of Physics.
ACCESSION #
4812784

 

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