Enhancement of dislocation velocities by stress-assisted kink nucleation at the native oxide/SiGe interface

Stach, E. A.; Hull, R.
July 2001
Applied Physics Letters;7/16/2001, Vol. 79 Issue 3
Academic Journal
Experiments have shown that a native oxide layer on the surface of a strained SiGe epilayer causes an order of magnitude increase in dislocation velocities during annealing over those observed in atomically clean samples and during crystal growth [E. A. Stach, R. Hull, R. M. Tromp, M. C. Reuter, M. Copel, F. K. LeGoues, and J. C. Bean, J. Appl. Phys. 83, 1931 (1998)]. This behavior is explained herein by stress-assisted dislocation kink nucleation at the oxide/epilayer interface. Finite element models are used to estimate the stress local to steps at this interface due to both intrinsic and thermal expansion stresses, and dislocation theory is used to determine the resulting increase in single kink nucleation. © 2001 American Institute of Physics.


Related Articles

  • Interfacial structure and its effect on nucleation and growth energetics in mesotaxial.... Hull, R.; Hsieh, Y.F.; White, A.E.; Short, K.T. // Applied Physics Letters;12/23/1991, Vol. 59 Issue 26, p3467 

    Demonstrates the formation of the stacking sequence at cobalt silicide/silicon interfaces. Production of partial dislocations at precipitate corners; Identification of the bonding coordination at the interface; Information on the competitive nucleation and growth of precipitates.

  • Two-dimensional quasicontinuum analysis of the strengthening and weakening effect of Cu/Ag interface on nanoindentation. Junwan Li; Jifa Mei; Yushan Ni; Huaibao Lu; Wugui Jiang // Journal of Applied Physics;Sep2010, Vol. 108 Issue 5, p054309 

    Multiscale simulations using the two-dimensional quasicontinuum method are performed to understand the nature of strengthening and weakening effect of Cu/Ag interface on nanoindentation at zero temperature. The investigation shows that the upper Cu film strengthens distinctly the lower Ag...

  • Geometric effects on dislocation nucleation in strained electronics. Li, T. L.; Lee, J. H.; Gao, Y. F.; Pharr, G. M.; Huang, M.; Tsui, T. Y. // Applied Physics Letters;4/27/2009, Vol. 94 Issue 17, p171905 

    Dislocation loops may be nucleated from sharp geometric features in strained micro- and nano-electronic devices. This process is investigated by a dissipative cohesive interface model which treats the dislocation core as a continuous, inhomogeneous lattice slip field. As a representative...

  • Structure and Property of Interfaces in ARB Cu/Nb Laminated Composites. Wang, J.; Kang, K.; Zhang, R.; Zheng, S.; Beyerlein, I.; Mara, N. // JOM: The Journal of The Minerals, Metals & Materials Society (TM;Oct2012, Vol. 64 Issue 10, p1208 

    Bulk Cu/Nb multilayered composites with high interfacial content have been synthesized via the accumulative roll bonding (ARB) method. Experimental characterization shows that these multilayers with submicronmeter and nanometer individual layer thicknesses contain a predominant, steady-state...

  • Structure and location of misfit dislocations in InGaAs epilayers grown on vicinal GaAs(001).... Chen, Y.; Zakharov, N.D.; Werner, P.; Liliental-Weber, Z.; Washburn, J.; Klem, J.F.; Tsao, J.Y. // Applied Physics Letters;3/29/1993, Vol. 62 Issue 13, p1536 

    Examines the atomic structure of misfit dislocation in In[sub 0.2]Ga[sub 0.8]As/GaAs interfaces by high-resolution electron microscopy. Confinement of partial dislocations to the interface; Influence of substrate misorientation on dislocation density; Impact of dislocation on misfit strains.

  • Dislocation glide at a (100) Si[sub x]Ge[sub 1-x]/Si interface. Rajan, Krishna // Applied Physics Letters;11/11/1991, Vol. 59 Issue 20, p2564 

    Examines a dislocation node at a Si[sub x]Ge[sub 1-x]/Si strained layer interface. Use of weak-beam electron microscopy; Constriction of the Lomer-Cottrell dislocations; Consistency of findings with a mechanism for generating dislocations by glide on the (100) plane.

  • Misfit dislocation microstructure and kinetics for In[sub x]Ga[sub 1-x]As/InP(100) and (110).... Hull, R.; Logan, R.A. // Applied Physics Letters;9/13/1993, Vol. 63 Issue 11, p1504 

    Examines the misfit dislocation microstructures and strain relaxation kinetics for lattice mismatched (100) and (110) interfaces in the In[sub x]Ga[sub 1-x]As/InP system. Comparison between the tensile and compressive stress of the interfaces; Rules for dislocation motion and structure;...

  • On an Effect of Dislocations on the Surface Tension at the Interface between Two Materials. Goldstein, R. V.; Sarychev, M. E. // Doklady Physics;Dec2001, Vol. 46 Issue 12, p853 

    Examines the effect of dislocations on the surface tension at an interface. Dislocation densities; Microelectronic metallization; Magnitude of internal dislocation radius.

  • Dislocation and Disclination Loops in the Virtual-Defect Method. Kolesnikova, A.L.; Romanov, A.E. // Physics of the Solid State;Sep2003, Vol. 45 Issue 9, p1706 

    A method of virtual circular defect loops is developed for determining the elastic fields produced by defects in a bounded medium in the case of an axially symmetric geometry. In this method, continuously distributed virtual circular Volterra and Somigliana dislocation loops are adjusted in such...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics