TITLE

Local structure of implanted B in amorphous Si

AUTHOR(S)
Mai, F.; Ittermann, B.; Fu¨llgrabe, M.; Heemeier, M.; Kroll, F.; Marbach, K.; Meier, P.; Mell, H.; Peters, D.; Thieß, H.; Ackermann, H.; Sto¨ckmann, H.-J.
PUB. DATE
July 2001
SOURCE
Applied Physics Letters;7/16/2001, Vol. 79 Issue 3
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
[sup 12]B probe nuclei are implanted in amorphous Si and monitored by β-radiation-detected nuclear magnetic resonance (β-NMR). Independently of growth conditions and impurity content, we find the same frequency distribution in a variety of samples. This is interpreted as an intrinsic signature of the amorphous environment while preferential B–H pairing is not observed. Comparing our data with earlier [sup 11]B-NMR work, we find the local B configuration to be completely controlled by the incorporation process. In our low-dose implantation experiment, all B is fourfold coordinated and electrically active. This is in contrast to gas-phase doping or high-dose implantation where the threefold coordination prevails. © 2001 American Institute of Physics.
ACCESSION #
4812779

 

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