Fabrication of strain-balanced Si/Si[sub 1-x]Ge[sub x] multiple quantum wells on Si[sub 1-y]Ge[sub y] virtual substrates and their optical properties

Kawaguchi, K.; Shiraki, Y.; Usami, N.; Zhang, J.; Woods, N. J.; Breton, G.; Parry, G.
July 2001
Applied Physics Letters;7/16/2001, Vol. 79 Issue 3
Academic Journal
Strain-balanced Si/SiGe multiple quantum wells (MQWs), which are designed to overcome the limitation of the number of wells coming from the strain accumulation, were fabricated, and their optical properties were investigated. X-ray diffraction spectra and cross-sectional transmission-electron-microscope images showed a high-crystalline quality of samples and excellent uniformity of the well width. Well-resolved no-phonon and TO-phonon-assisted transitions from strain-balanced MQWs were observed by low-temperature photoluminescence spectroscopy, and both their temperature and excitation power dependence showed blueshifts due to the delocalization of excitons, the band bending, and/or the band-filling effect. © 2001 American Institute of Physics.


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