Time-resolved measurements of stress effects on solid-phase epitaxy of intrinsic and doped Si

Barvosa-Carter, W.; Aziz, M. J.
July 2001
Applied Physics Letters;7/16/2001, Vol. 79 Issue 3
Academic Journal
The effect of externally applied in-phase stresses on the solid-phase epitaxial growth rate of both intrinsic and B-doped Si has been measured using time-resolved reflectivity. The data are described phenomenologically by a product of a function of concentration, an Arrhenius function of temperature, and a Boltzmann factor in the product of the stress and the activation strain V[sup *], with V[sub 11][sup *]=(+0.14±0.04) and (+0.17±0.02) times the atomic volume, in intrinsic and B-doped material, respectively. © 2001 American Institute of Physics.


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