Mechanism of electron trapping in Ge-doped SiO[sub 2] glass

Uchino, T.; Takahashi, M.; Yoko, T.
July 2001
Applied Physics Letters;7/16/2001, Vol. 79 Issue 3
Academic Journal
We present a possible mechanism of electron trapping in Ge-doped SiO[sub 2] glass on the basis of first-principles quantum chemical calculations on clusters of atoms modeling the local structures in the glassy system. The calculations suggest that the so-called “Ge(1) and Ge(2)” centers are distinctly different electron centers rather than GeO[sub 4][sup -] variants and that an electron trapped at an oxygen vacancy site is a promising candidate for Ge(2). © 2001 American Institute of Physics.


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