TITLE

Computational band-structure engineering of III–V semiconductor alloys

AUTHOR(S)
Geller, Clint B.; Wolf, Walter; Picozzi, Silvia; Continenza, Alessandra; Asahi, Ryoji; Mannstadt, Wolfgang; Freeman, Arthur J.; Wimmer, Erich
PUB. DATE
July 2001
SOURCE
Applied Physics Letters;7/16/2001, Vol. 79 Issue 3
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Accurate band structures of binary semiconductors AB (A=Al, Ga, In and B=P, As, Sb) and selected ternary III–V semiconductors were calculated using an all-electron screened exchange approach within the full potential linearized augmented plane-wave method. Fundamental band gaps and Γ–L and Γ–X separations in higher-lying conduction bands are predicted with an accuracy of a few tenths of 1 eV. Screened exchange also performs better than the local density approximation for calculating conduction-band effective masses. Highly n-doped InPAs materials with compositions near InP[sub 0.2]As[sub 0.8] offer lower effective masses, greater optical band-gap shifts, and potentially higher electron mobility than n-doped InGaAs materials with comparable band gaps. © 2001 American Institute of Physics.
ACCESSION #
4812769

 

Related Articles

  • Influence of separate-confinement layer band structure on the transport-limited modulation.... Wu, T.C.; Kan, S.C.; Vassilovski, D.; Lau, K.Y. // Applied Physics Letters;7/26/1993, Vol. 63 Issue 4, p441 

    Analyzes the influence of separate-confinement layer band structure on the transport-limited modulation bandwidth in quantum well lasers. Alleviation of bandwidth limitation caused by physical- and state-space transports; Domination of the limitation due to intrinsic quantum capture; Effect of...

  • Band lineup at an organic-inorganic semiconductor heterointerface: perylenetetracarboxylic.... Hirose, Y.; Chen, W. // Applied Physics Letters;6/20/1994, Vol. 64 Issue 25, p3482 

    Examines band lineup at an organic-inorganic semiconductor interface. Analysis of the evolution of the interface electron distribution; Measurement of the highest occupied molecular orbital level of PTCDA; Factors determining the transport properties of the heterojunction.

  • Capacitance and conductance of semiconductor heterojunctions with continuous energy distribution of interface states. Sakhaf, M.; Schmeits, M. // Journal of Applied Physics;12/15/1996, Vol. 80 Issue 12, p6839 

    Presents a study which examined the electrical conduction in semiconductor heterojunctions. Details on the defect states of the conduction process; Methodology for the application of the conduction band; Results of mathematical methods for interface calculation.

  • Effective masses and g factors of electrons in excited states at the Γ point in III–V semiconductors. Dymnikov, V. D.; Konstantinov, O. V. // Physics of the Solid State;May2009, Vol. 51 Issue 5, p884 

    The numerical estimates of the effective masses and g factors of electrons in the excited conduction bands at the Γ point in III–V semiconductors are obtained in the scientific literature for the first time. The calculations are performed using the new approach developed in our...

  • Electrical transport in amorphous semiconducting AlMgB14 films. Tian, Y.; Li, G.; Shinar, J.; Wang, N. L.; Cook, B. A.; Anderegg, J. W.; Constant, A. P.; Russell, A. M.; Snyder, J. E. // Applied Physics Letters;8/16/2004, Vol. 85 Issue 7, p1181 

    The electrical transport properties of semiconducting AlMgB14 films deposited at room temperature and 573 K are reported in this letter. The as-deposited films are amorphous, and they exhibit high n-type electrical conductivity, which is believed to stem from the conduction electrons donated by...

  • Electronic structure of bismuth telluride quasi-two-dimensional crystal: A first principles study. Li, Xin; Ren, Hao; Luo, Yi // Applied Physics Letters;2/21/2011, Vol. 98 Issue 8, p083113 

    The electronic structures of atomically thin layers of bismuth telluride (Bi2Ti3) have been studied by using density functional theory. It is found that quintuple layers of Bi2Te3 are semiconductor with localized shallow bands. The weak covalent Bi-Te2 interaction in quintuple layer allows to...

  • Wide bandgap boost for renewables. Kinzer, Dan // Electronics Weekly;10/19/2011, Issue 2484, p10 

    In this article, the author discusses the appropriate use of wide bandgap devices. It mentions that bandgap devices are helpful in gaining efficiency, size, and weight at similar or even reduced cost for power electronic systems. It informs that wide bandgap devices can have 10 times better...

  • Direct measurement of the transparency current and valence band effective masses in tensile and.... Tiemeijer, L.F.; Thijs, P.J.A. // Applied Physics Letters;2/3/1992, Vol. 60 Issue 5, p554 

    Measures the transparency current densities and valence band effective masses in tensile and compressively strained semiconductor multiple quantum-well laser amplifier. Wavelength dependence of transparency current; Analysis of spectral and polarization dependence of gain; Consideration of...

  • Band offset design with quantum-well gate insulating structures. Schimizu, Tatsuo; Yamaguchi, Takeshi // Applied Physics Letters;8/16/2004, Vol. 85 Issue 7, p1167 

    The authors propose a concept, a nanoscaled quantum-well gate insulating structure. The effective conduction band offset (ΔEc) can be controlled with an appropriate combination of high-K and high-ΔEc materials. The electronic structures of SrTiO3 and Sr2TiO4 were studied by means of...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics