TITLE

Quasi-one-dimensional transport characteristics of ridge-type InGaAs quantum-wire field-effect transistors

AUTHOR(S)
Sugaya, Takeyoshi; Ogura, Mutsuo; Sugiyama, Yoshinobu; Shimizu, Toshiyuki; Yonei, Kenji; Jang, Kee Youn; Bird, Jonathan P.; Ferry, David K.
PUB. DATE
July 2001
SOURCE
Applied Physics Letters;7/16/2001, Vol. 79 Issue 3
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Ridge-type InGaAs/InAlAs quantum-wire field-effect transistors are realized by selective molecular-beam epitaxy and their transport characteristics are studied. An analysis of the depopulation of one-dimensional subbands in these structures reveals little evidence for sidewall depletion, and yields an estimate for the carrier density in good agreement with that found in two-dimensional InGaAs/InAlAs heterojunctions. Subband splittings as large as 7.4 meV are obtained in the wires, indicating their excellent one-dimensional transport properties. © 2001 American Institute of Physics.
ACCESSION #
4812768

 

Related Articles

  • Electrical properties of InAs1-xSbx and InSb nanowires grown by molecular beam epitaxy. Thelander, Claes; Caroff, Philippe; Plissard, Sébastien; Dick, Kimberly A. // Applied Physics Letters;6/4/2012, Vol. 100 Issue 23, p232105 

    Results of electrical characterization of Au nucleated InAs1-xSbx nanowires grown by molecular beam epitaxy are reported. An almost doubling of the extracted field effect mobility compared to reference InAs nanowires is observed for a Sb content of x = 0.13. Pure InSb nanowires on the other hand...

  • Depletion-mode ZnO nanowire field-effect transistor. Heo, Y. W.; Tien, L. C.; Kwon, Y.; Norton, D. P.; Pearton, S. J.; Kang, B. S.; Ren, F. // Applied Physics Letters;9/20/2004, Vol. 85 Issue 12, p2274 

    Single ZnO nanowire metal-oxide-semiconductor field-effect transistors (MOSFETs) were fabricated using nanowires grown by site selective molecular-beam epitaxy. When measured in the dark at 25°C, he depletion-mode transistors exhibit good saturation behavior, a threshold voltage of ∼-3...

  • Ambipolar transistor behavior in p-doped InAs nanowires grown by molecular beam epitaxy. So\rensen, B. S.; Aagesen, M.; So\rensen, C. B.; Lindelof, P. E.; Martinez, K. L.; Nygård, J. // Applied Physics Letters;1/7/2008, Vol. 92 Issue 1, p012119 

    We present the electric properties of p-InAs nanowire field-effect transistors showing ambipolar conduction. Be doped nanowires are grown by the vapor-solid-solid mechanism using molecular beam epitaxy with in situ deposited Au catalyst particles. P-type conduction in InAs nanowires is...

  • Diameter-dependent boron diffusion in silicon nanowire-based transistors. Schulze, Andreas; Florakis, Antonios; Hantschel, Thomas; Eyben, Pierre; Verhulst, Anne S.; Rooyackers, Rita; Vandooren, Anne; Vandervorst, W. // Applied Physics Letters;2/4/2013, Vol. 102 Issue 5, p052108 

    We analyzed the carrier profile in silicon nanowire-based tunnel-FETs as a function of nanowire diameter using scanning spreading resistance microscopy. The nanowires were etched into an epitaxially grown stack, of which the top layer was in situ boron doped and the top contact was implanted. We...

  • Transport and strain relaxation in wurtzite InAs-GaAs core-shell heterowires. Kavanagh, Karen L.; Salfi, Joe; Savelyev, Igor; Blumin, Marina; Ruda, Harry E. // Applied Physics Letters;4/11/2011, Vol. 98 Issue 15, p152103 

    Indium-arsenide-gallium-arsenide (InAs-GaAs) core-shell, wurtzite nanowires have been grown on GaAs (001) substrates. The core-shell geometries (core radii 11 to 26 nm, shell thickness >2.5 nm) exceeded equilibrium critical values for strain relaxation via dislocations, apparent from...

  • Suspended InAs nanowire gate-all-around field-effect transistors. Qiang Li; Shaoyun Huang; Dong Pan; Jingyun Wang; Jianhua Zhao; Xu, H. Q. // Applied Physics Letters;9/15/2014, Vol. 105 Issue 11, p1 

    Gate-all-around field-effect transistors are realized with thin, single-crystalline, pure-phase InAs nanowires grown by molecular beam epitaxy. At room temperature, the transistors show a desired high on-state current Ion of ~10 μA and an on-off current ratio Ion/Ioff of as high as 106...

  • Pseudomorphic ZnSe/n-GaAs doped-channel field-effect transistors by interrupted molecular beam epitaxy. Studtmann, G. D.; Gunshor, R. L.; Kolodziejski, L. A.; Melloch, M. R.; Cooper, J. A.; Pierret, R. F.; Munich, D. P.; Choi, C.; Otsuka, N. // Applied Physics Letters;4/11/1988, Vol. 52 Issue 15, p1249 

    The fabrication and current-voltage characteristics of the first depletion-mode field-effect transistors based on a pseudomorphic ZnSe/n-GaAs heterointerface are described. The devices are doped-channel field-effect transistors produced by means of interrupted growth with the use of two separate...

  • High transconductance in-plane-gated transistors. Wieck, A.D.; Ploog, K. // Applied Physics Letters;8/31/1992, Vol. 61 Issue 9, p1048 

    Demonstrates the fabrication of one-dimensional (1D) field-effect transistors at room temperature. Basis for the 1D transistors; Determination of the channel effective width; Use of molecular beam epitaxy grown heterostructures to prepare the channels; Factors attributed to higher current and...

  • Use of high-purity Al[sub x]Ga[sub 1-x]As layers in epitaxial structures for high-power microwave field-effect transistors. Zhuravlev, K. S.; Toropov, A. I.; Shamirzaev, T. S.; Bazarov, A. K.; Rakov, Yu. N.; Myakishev, Yu. B. // Technical Physics Letters;Aug99, Vol. 25 Issue 8, p595 

    The fabrication of high-purity layers of Al[sub x]Ga[sub 1-x]As solid solutions in the range 0 ≤x≤0.38 by molecular beam epitaxy is reported. The low-temperature photoluminescence spectra of these layers reveal predominantly the free exciton recombination line (X). The narrow width...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics