Quasi-one-dimensional transport characteristics of ridge-type InGaAs quantum-wire field-effect transistors

Sugaya, Takeyoshi; Ogura, Mutsuo; Sugiyama, Yoshinobu; Shimizu, Toshiyuki; Yonei, Kenji; Jang, Kee Youn; Bird, Jonathan P.; Ferry, David K.
July 2001
Applied Physics Letters;7/16/2001, Vol. 79 Issue 3
Academic Journal
Ridge-type InGaAs/InAlAs quantum-wire field-effect transistors are realized by selective molecular-beam epitaxy and their transport characteristics are studied. An analysis of the depopulation of one-dimensional subbands in these structures reveals little evidence for sidewall depletion, and yields an estimate for the carrier density in good agreement with that found in two-dimensional InGaAs/InAlAs heterojunctions. Subband splittings as large as 7.4 meV are obtained in the wires, indicating their excellent one-dimensional transport properties. © 2001 American Institute of Physics.


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