TITLE

Increased thermal budget for selectively doped heterostructures by employing AlAs/GaAs superlattices

AUTHOR(S)
Reuter, D.; Meier, C.; Álvarez, M. A. Serrano; Wieck, A. D.
PUB. DATE
July 2001
SOURCE
Applied Physics Letters;7/16/2001, Vol. 79 Issue 3, p377
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The degradation of selectivity doped Al[sub 0.35]Ga[sub 0.65]As/GaAs heterostructures caused by rapid thermal annealing (RTA) was studied. The samples were annealed for 30 s at temperatures between 600 °C and 850 °C. Thereafter, the samples were characterized by Hall measurements at room temperature. Conventional heterostructures with a random alloy Al[sub 0.35]Ga[sub 0.65]As spacer and donor layer show a strong degradation for annealing temperatures of 650 °C or higher. For heterostructures employing a stoichiometric equivalent short period superlattice (SPS) in spacer and donor region only a slight degradation was found for annealing temperatures up to 850 °C. As reason for the increased thermal stability, the suppression of As loss during the annealing by the SPS was identified. © 2001 American Institute of Physics.
ACCESSION #
4812766

 

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