TITLE

Phase transition, ferroelectric, and dielectric properties of layer-structured perovskite CaBi[sub 3]Ti[sub 3]O[sub 12-δ] thin films

AUTHOR(S)
Kato, Kazumi; Suzuki, Kazuyuki; Nishizawa, Kaori; Miki, Takeshi
PUB. DATE
July 2001
SOURCE
Applied Physics Letters;7/16/2001, Vol. 79 Issue 3
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Thin films of a bismuth-based layer-structured perovskite compound with a number of oxygen octahedron along the c axis between Bi–O layers of three, CaBi[sub 3]Ti[sub 3]O[sub 12-δ], were prepared using a mixture solution of complex alkoxides. The films crystallized below 550 °C. The crystal structure and surface morphology of these films changed between 600 and 650 °C. The 650 °C-annealed thin film consisted of well-developed grains and exhibited polarization–electric hysteresis loops. The remanent polarization and coercive electric field were 8.5 μC/cm2 and 124 kV/cm, respectively, at 7 V. The dielectric constant and loss factor were about 250 and 0.048, respectively, at 100 kHz. © 2001 American Institute of Physics.
ACCESSION #
4812759

 

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