TITLE

Integration of self-assembled diblock copolymers for semiconductor capacitor fabrication

AUTHOR(S)
Black, C. T.; Guarini, K. W.; Milkove, K. R.; Baker, S. M.; Russell, T. P.; Tuominen, M. T.
PUB. DATE
July 2001
SOURCE
Applied Physics Letters;7/16/2001, Vol. 79 Issue 3
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We combine a self-organizing diblock copolymer system with semiconductor processing to produce silicon capacitors with increased charge storage capacity over planar structures. Our process uses a diblock copolymer thin film as a mask for dry etching to roughen a silicon surface on a 30 nm length scale, which is well below photolithographic resolution limits. Electron microscopy correlates measured capacitance values with silicon etch depth, and the data agree well with a geometric estimate. This block copolymer nanotemplating process is compatible with standard semiconductor processing techniques and is scalable to large wafer dimensions. © 2001 American Institute of Physics.
ACCESSION #
4812754

 

Related Articles

  • Impact of Kr gas mixing in oxygen plasma etching of ferroelectric poly(vinylidene fluoride-trifluoroethylene) copolymer films. Yoon, Joo-Won; Ohmi, Shun-ichiro; Park, Byung-Eun; Ishiwara, Hiroshi // Applied Physics Letters;10/20/2008, Vol. 93 Issue 16, p162904 

    Oxygen plasma etching characteristics of ferroelectric poly(vinylidene fluoride-trifluoroethylene) copolymer films are investigated. It was found in MFM (M: metal; F: ferroelectric) capacitors that plasma damage effects to the ferroelectric properties were insignificant when Au metal masks were...

  • Electrical measurements on p[sup +]-p[sup -]-p[sup +] homoepitaxial diamond capacitors. Inushima, Takashi; Matsushita, Takahiro; Mamin, Rinat F.; Ohya, Seishirou; Shiomi, Hiromu // Applied Physics Letters;8/21/2000, Vol. 77 Issue 8 

    Conductance versus voltage and capacitance versus voltage (C-V) characteristics are investigated for p[sup +]-p[sup -]-p[sup +] capacitors over a temperature range of 40-300 K, where the p[sup +] layer is heavily doped homoepitaxial diamond and has impurity-band conduction and the p[sup -] layer...

  • A temperature-independent capacitance in semiconductor-insulator-semiconductor capacitors. Hickmott, T. W.; Solomon, P. M. // Journal of Applied Physics;5/15/1990, Vol. 67 Issue 10, p6548 

    Presents a study which investigated temperature-independent capacitance in semiconductor-insulator-semiconductor (SIS) capacitors. Details of experimental techniques used; Inputs needed in the calculation of theoretical capacitance-voltage curves for SIS capacitors; Methods for determining the...

  • Polarity dependence of defect generation in ultrathin SiO[sub 2]/ZrO[sub 2] gate dielectric stacks. Houssa, M.; Afanas’ev, V. V.; Stesmans, A.; Heyns, M. M. // Applied Physics Letters;11/5/2001, Vol. 79 Issue 19, p3134 

    The generation of defects during the injection of charge carriers in metal–oxide–semiconductor capacitors with ultrathin SiON/ZrO[sub 2] gate stacks is investigated. A polarity dependence for the defect generation is revealed. It is shown that this polarity effect is inconsistent...

  • Comparative electrical bistable characteristics of ferroelectric poly(vinylidene fluoride-trifluoroethylene) copolymer based nonvolatile memory device architectures. Choi, Chang Woo; Prabu, Arun Anand; Kim, Yu Min; Yoon, Sun; Kim, Kap Jin; Park, Cheolmin // Applied Physics Letters;11/3/2008, Vol. 93 Issue 18, p182902 

    We report the thermal and electrical bistable characteristics of ferroelectric poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE) (72/28 mol %)] thin films as a function of varying memory device architectures. Rectangular-shaped capacitance-voltage (C-V) hysteresis loops obtained using 100...

  • Second-Harmonic Generation in Vinylidene Fluoride—Trifluoroethylene Copolymers Doped with Donor—Acceptor Molecules. Verkhovskaya, K. A.; Grishina, A. D.; Kuznetsova, N. I.; Pereshivko, L. Ya.; Krivenko, T. V.; Savel’ev, V. V. // Crystallography Reports;Mar2002, Vol. 47 Issue 2, p330 

    The temperature dependence of the second-harmonic generation in a vinylidene fluoride-trifluoroethylene ferroelectric copolymer doped with 5 wt % of a noncentrosymmetric 4-anilino-4′-nitroazobenzene chromophore is analyzed. The second-order susceptibility Χ[sup (2)] in the ferroelectric...

  • Charge transport in a blue-emitting alternating block copolymer with a small spacer to conjugated... Ma, Dongge; Hummelgen, I. A. // Journal of Applied Physics;1/1/2000, Vol. 87 Issue 1, p312 

    Presents information on a study which investigated the charge transport characteristics of an electroluminescent block copolymer and compares its transport characteristics including mobilities and trap distribution energies with investigated related copolymers. Experimental method; Results;...

  • Photocapacitance relaxation in amorphous As[sub 2]Se[sub 3] films. Vasiliev, I. A.; Shutov, S. D. // Semiconductors;Jul99, Vol. 33 Issue 7, p792 

    Studies of the photocapacitance of a-As[sub 2]Se[sub 3] films reveal that its relaxation has a fast and a slow component, leading to two distinct spectra for the density and absorption cross section of deep levels, with different thresholds and magnitudes. The authors associate the fast...

  • Characterization of metal-oxide-semiconductor capacitors, fabricated on (111) beta-SiC.... Chen, H-S.; Parsons, J.D. // Applied Physics Letters;11/14/1994, Vol. 65 Issue 20, p2576 

    Characterizes metal-oxide-semiconductor (MOS) capacitors fabricated on (111) beta-silicon carbide (SiC) epilayers. Growth of beta-SiC on (111) titanium carbide by disylethane pyrolysis; Electrical properties of MOS capacitor; Feasibility of inversion mode MOS field effect transistors in...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics