High electric field transport in modulation-doped InAs self-assembled quantum dots for high-frequency applications

Park, Hee Seok; Mokerov, Vladimir G.
July 2001
Applied Physics Letters;7/16/2001, Vol. 79 Issue 3
Academic Journal
Modulation-doped N–AlGaAs (GaAs/InAs/GaAs/InAs)/GaAs-heterostructures with InAs-quantum dots (QDs) have been grown and investigated. Using these structures, modulation-doped field-effect transistors (MODFETs) have been fabricated and analyzed. It has been observed that they have the anomalous two-step shape in the current–voltage curve in contrast to the conventional curve with saturation. The saturation current I[sub dss] for the second step practically does not depend on the gate bias U[sub G], showing that the concentration of electrons participating in the current flow becomes independent of U[sub G]. It has been demonstrated that the QD-MODFETs present a promising type of the hot electron devices for high frequency applications. © 2001 American Institute of Physics.


Related Articles

  • Room-Temperature Photoluminescence at 1.55μm from Heterostructures with InAs/InGaAsN Quantum Dots on GaAs Substrates. Odnoblyudov, V. A.; Egorov, A. Yu.; Kryzhanovskaya, N. V.; Gladyshev, A. G.; Mamutin, V. V.; Tsatsul’nikov, A. F.; Ustinov, V. M. // Technical Physics Letters;Nov2002, Vol. 28 Issue 11, p964 

    Room-temperature photoluminescence (PL) at 1.55 µm from heterostructures with InAs/InGaAsN quantum dots (QDs) grown by MBE on GaAs substrates is demonstrated for the first time. The effect of nitrogen incorporated into InAs/InGaAsN QDs on the PL wavelength and intensity was studied. The...

  • Photoelectric Spectroscopy of InAs/GaAs Quantum Dot Heterostructures in a Semiconductor/Electrolyte System. Karpovich, I. A.; Gorshkov, A. P.; Levichev, S. B.; Morozov, S. V.; Zvonkov, B. N.; Filatov, D. O. // Semiconductors;May2001, Vol. 35 Issue 5, p543 

    The photovoltaic effect in the semiconductor/electrolyte junction is an effective method for investigation of the energy spectrum of InAs/GaAs heterostructures with self-assembled quantum dots. An important advantage of this method is its high sensitivity. This makes it possible to obtain...

  • Spatial Distribution of Elastic Deformations in Ge/Si Structures with Quantum Dots. Nenashev, A. V.; Dvurechenskii, A. V. // Journal of Experimental & Theoretical Physics;Sep2000, Vol. 91 Issue 3, p497 

    A method is developed for calculating the elastic deformation in coherently strained heterostructures on the basis of the valence force field (VFF) model using the Green's function of the "atomistic" elastic problem. The spatial distribution of the elastic deformations in a Ge/Si system with...

  • Observation of built-in electric field in InP self-assembled quantum dot systems. Davydov, V.; Ignatiev, I.; Ren, H.-W.; Sugou, S.; Masumoto, Y. // Applied Physics Letters;5/17/1999, Vol. 74 Issue 20, p3002 

    Studies the Franz-Keldysh oscillations in the nonlinear reflection spectra of heterostructures with InP self-assembled quantum dots. Average size of the quantum dots; Origin of the electric field manifested by the oscillations; Intrinsic defects on the dot interface.

  • Treatment of Inhomogeneous Radiation Broadening in Quantum Dot Heterostructures Described within the Framework of the Superradiation Model. Gordeev, N. Yu.; Zaıtsev, S. V.; Kopchatov, V. I.; Karachinskiı, L. Ya.; Novikov, I. I.; Ustinov, V. M.; Kop’ev, P. S. // Technical Physics Letters;Mar2000, Vol. 26 Issue 3, p259 

    Based on the simplest expressions of the theory of superradiation for a two-level system, a model is suggested to describe inhomogeneously broadened spectra of radiation from heterostructures with quantum dot. A 98% agreement between predicted and experimental spectra is demonstrated in the...

  • Multilayer Structures with Quantum Dots in the InAs/GaAs System Emitting at a Wavelength of 1.3μm. Tsyrlin, G. É.; Polyakov, N. K.; Egorov, V. A.; Petrov, V. N.; Volovik, B. V.; Sizov, D. S.; Tsatsul’nikov, A. F.; Ustinov, V. M. // Technical Physics Letters;May2000, Vol. 26 Issue 5, p423 

    The optical properties of multilayer structures with quantum dots in the heteroepitaxial InAs/GaAs system have been studied. The structures were obtained by the method of submonolayer migration-stimulated epitaxy. It is shown that the optimized growth conditions provide room-temperature...

  • Quantum dot lasers: the birth and future trends. Ledentsov, N. N. // Semiconductors;Sep99, Vol. 33 Issue 9, p946 

    Despite its early age, laser based on arrays of self-organized quantum dots modified all the basic commandments of the heterostructure laser. Excitonic gain mechanism and discrete energy spectrum in a quantum dot provide principally new ways to control optical properties of the media. Extension...

  • Negative Interband Photoconductivity in Ge/Si Heterostructures with Quantum Dots of the Second Type. Yakimov, A. I.; Dvurechenskii, A. V.; Nikiforov, A. I.; Pchelyakov, O. P. // JETP Letters;8/25/2000, Vol. 72 Issue 4, p186 

    It was found that irradiating an array of Ge nanoclusters in n-Si with light that induced imerband transitions gave rise to negative photoconductivity. This result was explained by localization of equilibrium electrons at the Si/Ge interface in the potential of the nonequilibrium holes trapped...

  • Photoelectric properties of GaAs/InAs heterostructures with quantum dots. Zvonkov, B. N.; Malkina, I. G.; Lin’kova, E. R.; Aleshkin, V. Ya.; Karpovich, I. A.; Filatov, D. O. // Semiconductors;Sep97, Vol. 31 Issue 9, p941 

    The capacitive photovoltage and photoconductivity spectra of GaAs/InAs heterostructures with quantum dots is discussed. For these structures, which were fabricated by metallorganic gas-phase epitaxy, the photosensitivity spectrum has a sawtoothed shape in the wavelength range where absorption by...

  • Room Temperature λ = 1.3 μm Photoluminescence from InGaAs Quantum Dots on (001) Si Substrate. Burbaev, T. M.; Kazakov, I. P.; Kurbatov, V. A.; Rzaev, M. M.; Tsvetkov, V. A.; Tsekhosh, V. I. // Semiconductors;May2002, Vol. 36 Issue 5, p535 

    GaAs/In[sub x]Ga[sub 1-x]As quantum dot heterostructures exhibiting high-intensity λ = 1.3 µm photoluminescence at room temperature have been grown on (001) Si substrate with a Si[sub 1-x]Ge[sub x] buffer layer. The growth was done successively on two MBE machines with sample transfer via...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics