TITLE

High-detectivity, normal-incidence, mid-infrared (λ∼4 μm)InAs/GaAs quantum-dot detector operating at 150 K

AUTHOR(S)
Stiff, A. D.; Krishna, S.; Bhattacharya, P.; Kennerly, S.
PUB. DATE
July 2001
SOURCE
Applied Physics Letters;7/16/2001, Vol. 79 Issue 3
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Normal-incidence InAs/GaAs quantum-dot detectors have been grown, fabricated, and characterized for mid-infrared detection in the temperature range from 78 to 150 K. Due to the presence of an Al[sub 0.3]Ga[sub 0.7]As current blocking layer in the heterostructure, the dark current is very low, and at T=100 K, I[sub dark]=1.7 pA for V[sub bias]=0.1 V. The peak of the spectral response curve is at λ∼4 μm, with Δλ/λ=0.3 and V[sub bias]=0.1 V. At T=100 K, for V[sub bias]=0.3 V, the peak detectivity, D[sup *], is 3×10[sup 9] cm Hz[sup 1/2]/W, and the peak responsivity, R[sub p], is 2 mA/W with a photoconductive gain of g=18. © 2001 American Institute of Physics.
ACCESSION #
4812749

 

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