TITLE

Transport characteristics of electrons in weak short-period two-dimensional potential arrays

AUTHOR(S)
Kawaharazuka, A.; Saku, T.; Tokura, Y.; Horikoshi, Y.; Hirayama, Y.
PUB. DATE
July 2001
SOURCE
Applied Physics Letters;7/16/2001, Vol. 79 Issue 3
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We study the transport characteristics of electrons in weak short-period two-dimensional potential arrays formed on a back-gated undoped GaAs/AlGaAs heterostructure with a shallow channel. The period of the potential is as short as 50 nm. We achieve the condition where the unit cell is filled by less than one electron. In addition to the conventional magnetoresistance characteristics, we have found a feature that is determined solely by electron density. This feature reflects the strong Coulomb interaction between the electrons confined in the potential arrays. © 2001 American Institute of Physics.
ACCESSION #
4812747

 

Related Articles

  • Ballistic electron transport in macroscopic four-terminal square structures with high mobility. Hirayama, Y.; Saku, T.; Tarucha, S.; Horikoshi, Y. // Applied Physics Letters;6/10/1991, Vol. 58 Issue 23, p2672 

    Studies ballistic electron transport in macroscopic four-terminal square structures with high mobility. Detection of ballistic electron transport; Evaluation of the ballistic mean free path.

  • Study of deleterious aging effects in GaN/AlGaN heterostructures. Elhamri, S.; Saxler, A.; Mitchel, W. C.; Berney, R.; Elsass, C.; Smorchkova, Y.; Mishra, U. K.; Speck, J. S.; Chowdhury, U.; Dupuis, R. D. // Journal of Applied Physics;1/15/2003, Vol. 93 Issue 2, p1079 

    A study of aging effects on the electron transport properties of AlGaN/GaN heterostructures grown on sapphire and silicon carbide substrates using temperature dependent Hall effect measurements is presented with the focus on the variations in the mobility, carrier concentration, and resistivity...

  • Long-range, minority-carrier transport in high quality 'surface-free' GaAs/AlGaAs double.... Gilliland, G.D.; Wolford, D.J.; Kuech, T.F.; Bradley, J.A. // Applied Physics Letters;7/8/1991, Vol. 59 Issue 2, p216 

    Measures minority-carrier transport in high quality surface-free gallium arsenide/aluminum gallium arsenide heterostructures. Use of time-resolved photoluminescence imaging technique; Magnitude of band-to-band radiative recombination lifetimes; Mediation of carrier transport by hole-dominated...

  • Electron transport in AlGaN–GaN heterostructures grown on 6H–SiC substrates. Gaska, R.; Yang, J. W.; Osinsky, A.; Chen, Q.; Khan, M. Asif; Orlov, A. O.; Snider, G. L.; Shur, M. S. // Applied Physics Letters;2/9/1998, Vol. 72 Issue 6 

    We investigated two-dimensional electron transport in doped AlGaN–GaN heterostructures (with the electron sheet concentration n[sub s]approx. 10[sup 13] cm[sup -2]) grown on conducting 6H–SiC substrates in the temperature range T=0.3–300 K. The electron mobility in...

  • Electron transport properties of Si/SiGe heterostructures: Measurements and device implications. Ismail, K.; Nelson, S.F. // Applied Physics Letters;8/2/1993, Vol. 63 Issue 5, p660 

    Examines the significance of the electron transport properties of silicon (Si) and silicon germinide (SiGe) heterostructures. Occurrence of biaxial tensile strain following the growth of Si on relaxed SiGe; Influence of sheet resistance reduction on Si and SiGe structures; Effects of electron...

  • Quantized conductance in a split-gate point contact based on a pseudomorphic InGaAs/InP heterostructure. Tietze, M. F.; Schäpers, Th.; Appenzeller, J.; Engels, G.; Hollfelder, M.; Lengeler, B.; Lüth, H. // Journal of Applied Physics;1/15/1996, Vol. 79 Issue 2, p871 

    Presents a study which described the fabrication and characterization of split-gate point contacts based on a pseudomorphic InGaAs/InP heterostructure with an indium content of 77% in the strained channel layer. Introduction to ballistic transport in a two-dimensional electron gas based on...

  • Electron transport properties of double delta-doped GaAs structures grown by low-pressure metalorganic chemical vapor deposition. Gurtovoi, V. L.; Valyaev, V. V.; Shapoval, S. Yu.; Pustovit, A. N. // Applied Physics Letters;3/9/1998, Vol. 72 Issue 10 

    Electron transport properties of double delta-doped GaAs structures based on high electron mobility single delta-doped layers with a sheet concentration of 3×10[sup 12] cm[sup -2] have been investigated for spacer thicknesses up to 1100 Å at 77 and 300 K. At an optimized spacer thickness...

  • High-frequency study of nonequilibrium transport in heterostructure bipolar transistors. Chen, Y. K.; Levi, A. F. J.; Nottenburg, R. N.; Beton, P. H.; Panish, M. B. // Applied Physics Letters;10/23/1989, Vol. 55 Issue 17, p1789 

    We report results of studying nonequilibrium transport in heterostructure bipolar transistors at a millimeter-wave band. Increasing the total potential drop in the collector from 0.88 to 1.6 eV changes the measured intrinsic transit delay from 0.32 to 0.63 ps due to the increasing importance of...

  • Time-of-flight measurement of electron velocity in an In0.52Al0.48As/In0.53Ga0.47As /In0.52Al0.48As double heterostructure. Shigekawa, Naoteru; Furuta, Tomofumi; Arai, Kunihiro // Applied Physics Letters;7/2/1990, Vol. 57 Issue 1, p67 

    The electron velocity versus electric field (v-E) relationship was measured between 0 and 12 kV/cm at room temperature for a selectively Be-doped In0.52Al0.48As/In0.53Ga0.47As /In0.52Al0.48As double heterostructure. It was found that the observed electron velocity is greater than that previously...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics