TITLE

Carrier screening effects in photoluminescence spectra of InGaAsP/InP multiple quantum well photovoltaic structures

AUTHOR(S)
Raisky, O. Y.; Wang, W. B.; Alfano, R. R.; Reynolds, C. L.
PUB. DATE
July 2001
SOURCE
Applied Physics Letters;7/16/2001, Vol. 79 Issue 3
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Room temperature photoluminescence of p–i–n InGaAsP/InP multiple quantum well heterostructures was investigated under different excitation intensities. Photoluminescence spectra show the effect of phase space filling in quantum wells with increasing excitation density. Bias dependence of photoluminescence clearly demonstrates field screening that occurs inside the undoped layer. Device simulation is used to explain the observed phenomena. © 2001 American Institute of Physics.
ACCESSION #
4812746

 

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