Synthesis and characterization of aerosol silicon nanocrystal nonvolatile floating-gate memory devices

Ostraat, M. L.; De Blauwe, J. W.; Green, M. L.; Bell, L. D.; Brongersma, M. L.; Casperson, J.; Flagan, R. C.; Atwater, H. A.
July 2001
Applied Physics Letters;7/16/2001, Vol. 79 Issue 3
Academic Journal
This letter describes the fabrication and structural and electrical characterization of an aerosol-nanocrystal-based floating-gate field-effect-transistor nonvolatile memory. Aerosol nanocrystal nonvolatile memory devices demonstrate program/erase characteristics comparable to conventional stacked-gate nonvolatile memory devices. Aerosol nanocrystal devices with 0.2 μm channel lengths exhibit large threshold voltage shifts (>3 V), submicrosecond program times, millisecond erase times, excellent endurance (>10[sup 5] program/erase cycles), and long-term nonvolatility (>10[sup 6] s) despite thin tunnel oxides (55–60 Å). In addition, a simple aerosol fabrication and deposition process makes the aerosol nanocrystal memory device an attractive candidate for low-cost nonvolatile memory applications. © 2001 American Institute of Physics.


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