TITLE

Synthesis and characterization of aerosol silicon nanocrystal nonvolatile floating-gate memory devices

AUTHOR(S)
Ostraat, M. L.; De Blauwe, J. W.; Green, M. L.; Bell, L. D.; Brongersma, M. L.; Casperson, J.; Flagan, R. C.; Atwater, H. A.
PUB. DATE
July 2001
SOURCE
Applied Physics Letters;7/16/2001, Vol. 79 Issue 3
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
This letter describes the fabrication and structural and electrical characterization of an aerosol-nanocrystal-based floating-gate field-effect-transistor nonvolatile memory. Aerosol nanocrystal nonvolatile memory devices demonstrate program/erase characteristics comparable to conventional stacked-gate nonvolatile memory devices. Aerosol nanocrystal devices with 0.2 μm channel lengths exhibit large threshold voltage shifts (>3 V), submicrosecond program times, millisecond erase times, excellent endurance (>10[sup 5] program/erase cycles), and long-term nonvolatility (>10[sup 6] s) despite thin tunnel oxides (55–60 Å). In addition, a simple aerosol fabrication and deposition process makes the aerosol nanocrystal memory device an attractive candidate for low-cost nonvolatile memory applications. © 2001 American Institute of Physics.
ACCESSION #
4812744

 

Related Articles

  • Low-standby-power SRAM cell promises high-density memories. Bursky, Dave // Electronic Design;01/20/97, Vol. 45 Issue 2, p27 

    Reports on the development of an advanced memory cell that reduces the standby power of static-RAM memory of cells used in III/V- or silicon-based circuits. Allowance of much higher levels of integration for high-speed circuits; Combination of two heterostructure field-effect transistors; Two...

  • Room temperature operation of Si single-electron memory with self-aligned floating dot gate. Nakajima, Anri; Futatsugi, Toshiro; Kosemura, Kinjiro; Fukano, Tetsu; Yokoyama, Naoki // Applied Physics Letters;3/31/1997, Vol. 70 Issue 13, p1742 

    Develops a fabrication method for a silicon (Si) single-electron field effect transistor memory device. Structure of the field effect transistor; Ways to prevent vertical etching of the poly-Si layer; Details on the feasibility of practical single-electron memory.

  • Nonvolatile memory with graphene oxide as a charge storage node in nanowire field-effect transistors. Baek, David J.; Seol, Myeong-Lok; Choi, Sung-Jin; Moon, Dong-Il; Choi, Yang-Kyu // Applied Physics Letters;2/27/2012, Vol. 100 Issue 9, p093106 

    Through the structural modification of a three-dimensional silicon nanowire field-effect transistor, i.e., a double-gate FinFET, a structural platform was developed which allowed for us to utilize graphene oxide (GO) as a charge trapping layer in a nonvolatile memory device. By creating a...

  • Modification of drain current on metal–oxide–semiconductor field-effect transistor by magnetic field induced by remanent magnetization. Wakiya, Naoki; Shimizu, Kan; Mizukami, Satoshi; Shinozaki, Kazuo; Mizutani, Nobuyasu // Applied Physics Letters;10/25/2004, Vol. 85 Issue 17, p3772 

    We propose a concept of drain current (Ids) modification in a metal–oxide–semiconductor field-effect transistor (MOSFET) using the Lorentz force from an external magnetic field and a magnetic field induced by remanent magnetization. We fabricated a Pt/MZF/YSZ/MOSFET structure (MZF:...

  • Multiferroic oxides-based flash memory and spin-field-effect transistor. Chenglong Jia; Berakdar, Jamal // Applied Physics Letters;7/6/2009, Vol. 95 Issue 1, p012105 

    We propose a modified spin-field-effect transistor fabricated in a two dimensional electron gas (2DEG) formed at the surface of multiferroic oxides with a transverse helical magnetic order. The topology of the oxide local magnetic moments induces a resonant momentum-dependent effective...

  • Multilevel memory based on molecular devices. Chao Li; Fan, Wendy; Bo Lei, Wendy; Daihua Zhang; Song Han; Tao Tang; Xiaolei Liu; Zuqin Liu, Wendy; Asano, Sylvia; Meyyappan, Meyya; Jie Han; Chongwu Zhou // Applied Physics Letters;3/15/2004, Vol. 84 Issue 11, p1949 

    Multilevel molecular memory devices were proposed and demonstrated for nonvolatile data storage up to three bits (eight levels) per cell, in contrast to the standard one-bit-per-cell (two levels) technology. In the demonstration, charges were precisely placed at up to eight discrete levels in...

  • Nickel nanocrystal formation on HfO2 dielectric for nonvolatile memory device applications. Lee, Jong Jin; Harada, Yoshinao; Pyun, Jung Woo; Kwong, Dim-Lee // Applied Physics Letters;3/7/2005, Vol. 86 Issue 10, p103505 

    This letter presents the formation of nickel nanocrystal on HfO2 high-k dielectric and its application to the nonvolatile memory devices. The effects of the initial nickel layer thickness and annealing temperature on nickel nanocrystal formation are investigated. The n-metal-oxide-semiconductor...

  • Anomalous polarization switching in organic ferroelectric field effect transistors. Nguyen, C. A.; Lee, P. S.; Ng, N.; Su, H.; Mhaisalkar, S. G.; Ma, J.; Boey, F. Y. C. // Applied Physics Letters;7/23/2007, Vol. 91 Issue 4, p042909 

    The authors demonstrate organic ferroelectric field effect transistors using poly(vinylidene fluoride-trifluoroethylene) as dielectric in bottom common gate and patterned gate devices. Drain current hysteresis is resulted from the dipole switching at channel region due to gate-source bias. For...

  • Degradation mechanisms of organic ferroelectric field-effect transistors used as nonvolatile memory. Ng, Tse Nga; Russo, Beverly; Arias, Ana Claudia // Journal of Applied Physics;Nov2009, Vol. 106 Issue 9, p094504-1 

    Organic ferroelectric field-effect transistors were fabricated by inkjet printing for use as nonvolatile memory. Changes in device hysteresis were measured for 7 days to determine the limiting properties that restrict memory retention time. It was found that shifts in threshold voltage...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics