TITLE

Neutralization and negative ion conversion of low-energy proton scattered from Ar, Kr, and Xe condensed on the Pt(111) surface

AUTHOR(S)
Souda, Ryutaro; Kato, Masahiko
PUB. DATE
July 2001
SOURCE
Journal of Chemical Physics;7/15/2001, Vol. 115 Issue 3
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Low-energy H[sup +] ions (E[sub 0]=100 eV) are scattered from Ar, Kr, and Xe layers condensed on Pt(111) to investigate the mechanism of neutralization and negative ion conversion of H[sup +]. The surface peak of H[sup +] scattered from Xe is absent in a submonolayer coverage regime and increases in intensity as the multilayer grows. The H[sup +] ion survives neutralization on Ar at any coverage. The Xe 5p orbital has covalency with the valence-band orbitals of Pt(111) through which the H[sup +] 1s hole is delocalized, whereas Ar is basically physisorbed on Pt so that the H[sup +] 1s hole (or the Ar[sup +] 3p hole) is localized during the ion scattering time (around 5 femtoseconds). For the thick rare-gas solids, the H[sup +] yield from Xe is almost two orders of magnitude as small as that from Ar since the H[sup +] 1s hole is not perfectly localized in the former due to the hybridization between the Xe 5p orbitals. The H[sup -] yield from the solid Xe (Ar) surface is highly increased (decreased) relative to that from the Pt(111) surface. The H[sup -] ions are formed during a close encounter with a target atom and the existence of the band gap quenches the decay channels of H[sup -] on the outgoing trajectory from the surface. The experimental results of neutralization, electron-hole excitation, and negative ion conversion of H[sup +] are elucidated consistently on the basis of the formation of the quasimolecule and the localization/delocalization of the valence holes in it. © 2001 American Institute of Physics.
ACCESSION #
4812692

 

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