Atomic scale analysis of self assembled GaAs/AlGaAs quantum dots grown by droplet epitaxy

Keizer, J. G.; Bocquel, J.; Koenraad, P. M.; Mano, T.; Noda, T.; Sakoda, K.
February 2010
Applied Physics Letters;2/8/2010, Vol. 96 Issue 6, p062101
Academic Journal
In this letter we have performed a structural analysis at the atomic scale of GaAs/AlGaAs quantum dots grown by droplet epitaxy. The shape, composition, and strain of the quantum dots and the AlGaAs matrix are investigated. We show that the GaAs quantum dots have a Gaussian shape and that minor intermixing of Al with the GaAs quantum dot takes place. A wetting layer with a thickness of less than one bilayer was observed.


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