Identification of extremely radiative nature of AlN by time-resolved photoluminescence

Onuma, T.; Hazu, K.; Uedono, A.; Sota, T.; Chichibu, S. F.
February 2010
Applied Physics Letters;2/8/2010, Vol. 96 Issue 6, p061906
Academic Journal
Extremely radiative nature of high-quality AlN single crystalline epilayers was identified by means of far ultraviolet time-resolved photoluminescence using a frequency-quadrupled femtosecond Al2O3:Ti laser. The gross radiative lifetimes of a free excitonic polariton emission as short as 10 ps at 7 K and 180 ps at 300 K were revealed, which are the shortest ever reported for bulk semiconductor materials.


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