Highly tensile-strained, type-II, Ga1-xInxAs/GaSb quantum wells

Taliercio, T.; Gassenq, A.; Luna, E.; Trampert, A.; Tournié, E.
February 2010
Applied Physics Letters;2/8/2010, Vol. 96 Issue 6, p062109
Academic Journal
We have investigated the properties of highly tensile-strained (Ga,In)As layers in a GaSb matrix. In situ observations of the growth mode suggest the formation of (Ga,In)As quantum dots. In contrast, ex situ transmission electron microscopy evidences the formation of perfect quantum wells with the presence of a (Ga,In)Sb interfacial layer. This is analyzed taking into account the surfactant behavior of Sb and stabilization of the system by reduction of the overall strain. Photoluminescence is observed up to 3.0 μm at room temperature, in good agreement with calculations assuming a type-II band alignment and including the (Ga,In)Sb interfacial layer.


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