TITLE

Width-dependent hole mobility in top-down fabricated Si-core/Ge-shell nanowire metal-oxide-semiconductor-field-effect-transistors

AUTHOR(S)
Hashemi, Pouya; Meekyung Kim; Hennessy, John; Gomez, Leonardo; Antoniadis, Dimitri A.; Hoyt, Judy L.
PUB. DATE
February 2010
SOURCE
Applied Physics Letters;2/8/2010, Vol. 96 Issue 6, p063109
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Si-core/Ge-shell nanowire p-channel metal-oxide-semiconductor-field-effect-transistors with high-permittivity-dielectric/metal-gate have been demonstrated by selective epitaxial growth of Ge thin-films on the Si-nanowires fabricated by a top-down scheme. Cross-sectional transmission-electron-microscopy reveals that the epitaxial Ge shell exhibits hexagonal {111} facets, and that the Ge is defected, particularly near the Si corners. The hole mobility increases by 40% as the Si-core size is decreased from 70 to 20 nm. Finite-element simulations of the stress profile induced in the Ge channel by the gate stack suggest that a transformation in the transverse stress component from compression to tension plays a role in the mobility enhancement.
ACCESSION #
48067889

 

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