Electron energy band alignment at the (100)Si/MgO interface

Afanas'ev, V. V.; Stesmans, A.; Cherkaoui, K.; Hurley, P. K.
February 2010
Applied Physics Letters;2/1/2010, Vol. 96 Issue 5, p052103
Academic Journal
The electron energy band diagram at the (100)Si/MgO interface is characterized using internal photoemission of electrons and holes from Si into the oxide. For the as-deposited amorphous MgO the interface barriers correspond to a band gap width of 6.1 eV, i.e., much lower than the conventionally assumed bulk crystal value (7.83 eV). The annealing-induced crystallization of MgO mostly affects the energy of the valence band while the conduction band bottom retains its energy position at 3.37±0.05 eV above the top of the silicon valence band.


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