TITLE

Electron energy band alignment at the (100)Si/MgO interface

AUTHOR(S)
Afanas'ev, V. V.; Stesmans, A.; Cherkaoui, K.; Hurley, P. K.
PUB. DATE
February 2010
SOURCE
Applied Physics Letters;2/1/2010, Vol. 96 Issue 5, p052103
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The electron energy band diagram at the (100)Si/MgO interface is characterized using internal photoemission of electrons and holes from Si into the oxide. For the as-deposited amorphous MgO the interface barriers correspond to a band gap width of 6.1 eV, i.e., much lower than the conventionally assumed bulk crystal value (7.83 eV). The annealing-induced crystallization of MgO mostly affects the energy of the valence band while the conduction band bottom retains its energy position at 3.37±0.05 eV above the top of the silicon valence band.
ACCESSION #
47929130

 

Related Articles

  • Large impact of strontium substitution on photocatalytic water splitting activity of BaSnO3. Yuan, Yupeng; Lv, Jun; Jiang, Xiaojun; Li, Zhaosheng; Yu, Tao; Zou, Zhigang; Ye, Jinhua // Applied Physics Letters;8/27/2007, Vol. 91 Issue 9, p094107 

    The effects of Sr substitution for Ba on photocatalytic water splitting activity of BaSnO3 were investigated experimentally and theoretically. The chemical incorporation of Sr into BaSnO3 induced a great enhancement for H2 production. Density function theory calculations of Ba1-xSrxSnO3 (x=0,...

  • Plasma resonance in IR spectra of reflection of solid solutions PbTe 1− xBr x (c). Sharov, M. K. // Inorganic Materials;Aug2009, Vol. 45 Issue 8, p949 

    The concentration of free electrons, Fermi level, and specific electric conductivity on the basis of the studied coefficient of IR reflection in the region of plasma resonance of solid solutions PbTe1 − xBr x is determined. It is found that the concentration of electrons grows upon an...

  • Evidence of spin scattering and collection of hot electrons at different conduction minima in Si. Parui, S.; Rana, K. G.; Banerjee, T. // Applied Physics Letters;8/19/2013, Vol. 103 Issue 8, p082409 

    We observe unusual features in the bias dependence of spin transport in a Co/Au/NiFe spin valve fabricated on a highly textured Cu(100)/Si(100) Schottky interface, exploiting the local probing capabilities of a Ballistic electron magnetic microscope. This is ascribed to local differences in...

  • Electron transport and band structure in phosphorus-doped polycrystalline silicon films. Young, David L.; Branz, Howard M.; Liu, Fude; Reedy, Robert; To, Bobby; Wang, Qi // Journal of Applied Physics;Feb2009, Vol. 105 Issue 3, pN.PAG 

    We study transport mechanisms, effective mass, and band structure by measuring the resistivity, Hall, and Seebeck and Nernst coefficients in heavily phosphorus-doped polycrystalline silicon films made by thermal crystallization of amorphous silicon. We observe a change in transport mechanism...

  • k-Dependence of the Electron Spin-Flip Time in GaAs. Amo, A.; Viña, L.; Lugli, P.; Toropov, A. I.; Zhuravlev, K. S. // AIP Conference Proceedings;2007, Vol. 893 Issue 1, p1327 

    The k-dependence of the electron spin flip time (Ï„sf) in undoped GaAs is experimentally determined for the first time. Time-resolved optical orientation under strong optical injection is used to directly obtain Ï„sf, which monotonically decreases by more than one order of magnitude when...

  • Adsorption of Barium and Rare-Earth Metals on Silicon. Davydov, S. Yu. // Physics of the Solid State;Jun2004, Vol. 46 Issue 6, p1141 

    The change in the work function of the Si(111) surface caused by deposition of a submonolayer film of barium has been calculated with due account of dipole–dipole adatom repulsion and metallization effects. The results of the calculations agree satisfactorily with experimental data. The...

  • Microhollow cathode discharge and breakdown in micron separations. B. Sismanoglu; J. Amorim // European Physical Journal - Applied Physics;Feb2008, Vol. 41 Issue 2, p165 

    One important mechanism in the prebreakdown phase is the quantum tunnelling of electrons from the metal cathode to the gas, lowering the breakdown voltage. Considerable departures from the classical Paschen's curve for pd lower than 1.0?Torr?cm in microhollow cathodes with D = 200??m and...

  • Determination of energy barrier profiles for high-k dielectric materials utilizing bias-dependent internal photoemission. Brewer, Julie Casperson; Walters, Robert J.; Bell, L. Douglas; Farmer, Damon B.; Gordon, Roy G.; Atwater, Harry A. // Applied Physics Letters;11/1/2004, Vol. 85 Issue 18, p4133 

    We utilize bias-dependent internal photoemission spectroscopy to determine the metal/dielectric/silicon energy barrier profiles for Au/HfO2/Si and Au/Al2O3/Si structures. The results indicate that the applied voltage plays a large role in determining the effective barrier height and we attribute...

  • N incorporation into InGaAs cap layer in InAs self-assembled quantum dots. Chen, J. F.; Hsiao, R. S.; Hsieh, P. C.; Chen, Y. J.; Chen, Y. P.; Wang, J. S.; Chi, J. Y. // Journal of Applied Physics;12/1/2005, Vol. 98 Issue 11, p113525 

    This study presents the results of incorporating N into self-assembled InAs quantum dots (QDs) capped with an InGaAs cap layer. Experimental results indicate that such incorporation can redshift the QD ground state and decrease the energy spacing between the QD ground and first excited states....

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics