TITLE

ZnO nanowires array p-n homojunction and its application as a visible-blind ultraviolet photodetector

AUTHOR(S)
Leung, Y. H.; He, Z. B.; Luo, L. B.; Tsang, C. H. A.; Wong, N. B.; Zhang, W. J.; Lee, S. T.
PUB. DATE
February 2010
SOURCE
Applied Physics Letters;2/1/2010, Vol. 96 Issue 5, p053102
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We demonstrated a simple and low-cost fabrication of ZnO p-n homojunction. The junction consists of n-type ZnO nanowires array by a hydrothermal method covered with p-type Al, N co-doped ZnO film by a sol-gel method. The junction exhibits good rectification characteristics, with reverse leakage current and rectification ratio of ∼5 μA and ∼150 at bias of 3 V, respectively. The junction is operated as a photodetector when light radiation is shined on the glass-side of the device. The photodetector shows a peak responsivity at 384 nm with UV-visible responsivity ratio (R384 nm/R550 nm) of ∼70 at an operating bias of -3 V.
ACCESSION #
47929126

 

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