Band bending effect induced by gate voltage on the charge loss behavior of charge trap flash memory devices

Chang, M.; Hwang, H.; Jeon, S.
February 2010
Applied Physics Letters;2/1/2010, Vol. 96 Issue 5, p052106
Academic Journal
We found that the polarity of the gate voltage (Vg) during the retention characteristics for a SiO2/Si3N4/Al2O3 (ONA) stack can affect the charge loss direction, due to band bending. Positive Vg could induce electron de-trapping through Al2O3, while a negative Vg could induce the same through SiO2. Consequently, the charge loss rates exhibited a hairpin curve with Vg. We clearly observed that increases of the SiO2 thickness of the ONA stack induced negative shifts of hairpin curve. This result suggests that the dominant charge loss path could be changed from SiO2 to Al2O3 by increasing the SiO2 thickness without Vg.


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