TITLE

Process temperature dependent high frequency capacitance-voltage response of ZrO2/GeO2/germanium capacitors

AUTHOR(S)
Bethge, O.; Abermann, S.; Henkel, C.; Straif, C. J.; Hutter, H.; Smoliner, J.; Bertagnolli, E.
PUB. DATE
February 2010
SOURCE
Applied Physics Letters;2/1/2010, Vol. 96 Issue 5, p052902
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
ZrO2/GeO2 dielectrics are grown on germanium substrates by Atomic Layer Deposition (ALD) at substrate temperatures of 150, 200, and 250 °C, respectively. The impact of the deposition temperature on the electrical and structural properties of MOS capacitors is investigated. A significant influence of the ALD temperature on the high frequency capacitance in inversion can be observed, resulting in a shift of the minority carrier response time from 1.15 to 0.2 μs. Time-of-flight secondary ion mass spectroscopy investigations indicate a distinctive depletion of interfacial GeO at higher ALD temperatures, which give rise to trap levels near the oxide/Ge interface.
ACCESSION #
47929099

 

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