Wide-bandgap Zn2GeO4 nanowire networks as efficient ultraviolet photodetectors with fast response and recovery time

Chaoyi Yan; Singh, Nandan; Pooi See Lee
February 2010
Applied Physics Letters;2/1/2010, Vol. 96 Issue 5, p053108
Academic Journal
Ultraviolet (UV) photodetectors based on ternary Zn2GeO4 nanowire (NW) networks are demonstrated. The devices show fast response and recovery time, which is attributed to the unique NW-NW junction barrier dominated conductance for network devices. The UV-light induced barrier height modulation is much faster than the oxygen adsorption/desorption processes. The wide-band gap Zn2GeO4 NWs also exhibit high wavelength selectivity for deep UV detection. We demonstrate that ternary oxide NW-networks are ideal building blocks for nanoscale photodetectors with superior performance and facile fabrication processes.


Related Articles

  • Semiconductor nanowires: optics and optoelectronics. Agarwal, R.; Lieber, C. M. // Applied Physics A: Materials Science & Processing;Nov2006, Vol. 85 Issue 3, p209 

    Single crystalline semiconductor nanowires are being extensively investigated due to their unique electronic and optical properties and their potential use in novel electronic and photonic devices. The unique properties of nanowires arise owing to their anisotropic geometry, large surface to...

  • Direct band gap GaP nanowires predicted through first principles. Santos, Charley B. E.; Schmidt, T. M. // Journal of Applied Physics;Nov2010, Vol. 108 Issue 10, p103715 

    GaP nanowire, a potential material for new devices where optical and electronic applications can be merged, suffers some limitations because it presents indirect band gap. Using first principles calculations we demonstrate that, due to confinement effects, the band gap not only is enlarged when...

  • Electrical Crystallization Mechanism and Interface Characteristics of Nanowire ZnO/Al Structures Fabricated by the Solution Method. Yi-Wei Tseng; Fei-Yi Hung; Truan-Sheng Lui; Yen-Ting Chen; Ren-Syuan Xiao; Kuan-Jen Chen // Journal of Nanomaterials;2012, p1 

    Both solution nanowire ZnO and sputtered Al thin film on SiO2 as the wire-film structure and the Al film were a conductive channel for electrical-induced crystallization (EIC). Direct current (DC) raised the temperature of the Al film and improved the crystallization of the nanostructure. The...

  • Prospects for electron imaging with ultrafast time resolution. Armstrong, Michael R.; Reed, Bryan W.; Torralva, Ben R.; Browning, Nigel D. // Applied Physics Letters;3/12/2007, Vol. 90 Issue 11, p1 

    Many pivotal aspects of material science, biomechanics, and chemistry would benefit from nanometer imaging with ultrafast time resolution. Here the authors demonstrate the feasibility of short-pulse electron imaging with 10 nm/10 ps spatiotemporal resolution, sufficient to characterize phenomena...

  • Fe-catalyzed growth of one-dimensional α-Si3N4 nanostructures and their cathodoluminescence properties. Juntong Huang; Zhaohui Huang; Shuai Yi; Yan'gai Liu; Minghao Fanga; Shaowei Zhang // Scientific Reports;12/20/2013, p1 

    Preparation of nanomaterials with various morphologies and exploiting their novel physical properties are of vital importance in nanoscientific field. Similarly to the III-N compound semiconductors, Si3N4 nanostructures also could be potentially used for making optoelectronic devices. In this...

  • ZnO nanowires array p-n homojunction and its application as a visible-blind ultraviolet photodetector. Leung, Y. H.; He, Z. B.; Luo, L. B.; Tsang, C. H. A.; Wong, N. B.; Zhang, W. J.; Lee, S. T. // Applied Physics Letters;2/1/2010, Vol. 96 Issue 5, p053102 

    We demonstrated a simple and low-cost fabrication of ZnO p-n homojunction. The junction consists of n-type ZnO nanowires array by a hydrothermal method covered with p-type Al, N co-doped ZnO film by a sol-gel method. The junction exhibits good rectification characteristics, with reverse leakage...

  • Terahertz time-domain measurement of non-Drude conductivity in silver nanowire thin films for transparent electrode applications. Kim, Jaeseok; Maeng, Inhee; Jung, Jongwook; Song, Hyunjoon; Son, Joo-Hiuk; Kim, Kilsuk; Lee, Jaeik; Kim, Chul-Hong; Chae, Geesung; Jun, Myungchul; Hwang, YongKee; Jeong Lee, Su; Myoung, Jae-Min; Choi, Hyunyong // Applied Physics Letters;1/7/2013, Vol. 102 Issue 1, p011109 

    We have investigated the complex conductivity of silver nanowire thin films using terahertz time-domain spectroscopy. Maxwell-Garnett effective medium theory, which accounts for the effective complex conductivity of silver nanowires, is presented in detail theoretically and experimentally. The...

  • Recent Progress in Patterned Silicon Nanowire Arrays: Fabrication, Properties and Applications. Yan Zhang; Teng Qiu; Wenjun Zhang; Chu, Paul K. // Recent Patents on Nanotechnology;Jan2011, Vol. 5 Issue 1, p62 

    Currently there is great interest in patterned silicon nanowire arrays and applications. The accurately controlled fabrication of patterned silicon nanowire arrays with the desirable axial crystallographic orientation using simpler and quicker ways is very desirable and of great importance to...

  • High photocurrent gain in SnO2 nanowires. Cheng-Hua Lin; Reui-San Chen; Tzung-Te Chen; Hsin-Yi Chen; Yang-Fang Chen; Kuei-Hsien Chen; Li-Chyong Chen // Applied Physics Letters;9/15/2008, Vol. 93 Issue 11, p112115 

    Huge photocurrent gains with a value of 10 000 detected in air and 100 000 detected in vacuum have been obtained from SnO2 nanowires. Unlike previous reports that emphasized on carrier trapping by charge oxygen molecules in metal oxide nanostructures, we point out that spatial separation of...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics