TITLE

Resistance-dependent amplitude of random telegraph-signal noise in resistive switching memories

AUTHOR(S)
Ielmini, Daniele; Nardi, Federico; Cagli, Carlo
PUB. DATE
February 2010
SOURCE
Applied Physics Letters;2/1/2010, Vol. 96 Issue 5, p053503
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Resistive-switching memory (RRAM) is attracting a considerable interest for the development of high-density nonvolatile memories. However, several scaling and reliability issues still affect the development path of RRAM. This work addresses random telegraph-signal noise (RTN) of the RRAM current, potentially affecting the memory stability. We show a clear resistance dependence of the RTN amplitude, and we propose a physical model describing the interaction of the localized current with a fluctuating defect. By estimating the diameter of the conductive filament, the model quantitatively accounts for the observed RTN amplitude, thus allowing for an analytical prediction of state stability in RRAMs.
ACCESSION #
47929092

 

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