TITLE

Second-harmonic generation from a single wurtzite GaAs nanoneedle

AUTHOR(S)
Chen, Roger; Crankshaw, Shanna; Tran, Thai; Chuang, Linus C.; Moewe, Michael; Chang-Hasnain, Connie
PUB. DATE
February 2010
SOURCE
Applied Physics Letters;2/1/2010, Vol. 96 Issue 5, p051110
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report and characterize second-harmonic generation from a single wurtzite GaAs nanoneedle. The wurtzite crystal structure of the nanoneedle relaxes the strict nonlinear selection rules of normal zincblende GaAs while maintaining its strong nonlinear optical coefficients. The ability to grow GaAs nanoneedles without catalysts on (111) Si makes them particularly attractive as nonlinear optoelectronic media compatible with complementary metal-oxide-semiconductor technology.
ACCESSION #
47929091

 

Related Articles

  • Type-II behavior in wurtzite InP/InAs/InP core-multishell nanowires. Pal, B.; Goto, K.; Ikezawa, M.; Masumoto, Y.; Mohan, P.; Motohisa, J.; Fukui, T. // Applied Physics Letters;8/18/2008, Vol. 93 Issue 7, p073105 

    We study optical transitions from a periodic array of InP/InAs/InP core-multishell nanowires (CMNs) having a wurtzite crystal structure by using photoluminescence (PL) and PL excitation (PLE) spectroscopy. Observing a large Stokes shift between PL and PLE spectra, a blueshift of the PL peak with...

  • Single crystalline ZnMgO pleated nanosheets and quasinanotubes. Wang, J. R.; Ye, Z. Z.; He, H. P.; Zhu, L. P.; Jiang, J.; Zeng, Y. J. // Applied Physics Letters;7/2/2007, Vol. 91 Issue 1, p013105 

    ZnMgO pleated nanosheets and quasinanotubes were synthesized in the same region on Si substrate using [Mg(H2O)6](NO3)2 and zinc diethyl as the reactant source. The nanosheets are periodically pleated with the angles of 120° and 60° between two adjacent pleats. Some of the nanosheets fold...

  • Ferromagnetic behavior of CdNiS nanorods: a novel study. Kaur, Kamaldeep; Verma, N. // Journal of Materials Science: Materials in Electronics;Nov2015, Vol. 26 Issue 11, p8285 

    CdNiS (x = 0.00, 0.03, 0.05, 0.10) nanorods were synthesized by solvothermal method. Structural, compositional, morphological, optical, and magnetic studies of the undoped and doped CdS nanorods were carried out using, respectively, XRD, EDAX, TEM, HRTEM, SAED, UV-visible, PL, VSM. XRD confirm...

  • Direct to indirect band gap transition in ultrathin ZnO nanowires under uniaxial compression. Yang Zhang; Yu-Hua Wen; Jin-Cheng Zheng; Zi-Zhong Zhu // Applied Physics Letters;3/16/2009, Vol. 94 Issue 11, p113114 

    The direct to indirect band gap transition in ultrathin [0001] ZnO nanowires with the structural transformation from the regular wurtzite structure to a more close-packed hexagonal structure during uniaxial compression is studied by using the first-principles calculations. The results show that...

  • Dresselhaus effect in bulk wurtzite materials. Wang, Wan-Tsang; Wu, C. L.; Tsay, S. F.; Gau, M. H.; Lo, Ikai; Kao, H. F.; Jang, D. J.; Chiang, Jih-Chen; Lee, Meng-En; Chang, Yia-Chung; Chen, Chun-Nan; Hsueh, H. C. // Applied Physics Letters;8/20/2007, Vol. 91 Issue 8, p082110 

    The spin-splitting energies of the conduction band for ideal wurtzite materials are calculated within the nearest-neighbor tight-binding method. It is found that ideal wurtzite bulk inversion asymmetry yields not only a spin-degenerate line (along the kz axis) but also a minimum-spin-splitting...

  • Electrical contact for wurtzite GaN microdisks. Ikai Lo; Ying-Chieh Wang; Yu-Chi Hsu; Cheng-Hung Shih; Wen-Yuan Pang; Shuo-Ting You; Chia-Hsuan Hu; Chou, Mitch M. C.; Hsu, Gary Z. L. // Applied Physics Letters;8/25/2014, Vol. 105 Issue 8, p1 

    We developed a back processing to fabricate an electrical contact of wurtzite GaN microdisk on transparent p-type GaN template. The interface welding between the GaN microdisk and p-type GaN template produced a very solid and secure epi-film contact for the electrical current passing through,...

  • Growth and characterization of GaP nanowires on Si substrate. Zhang, G.; Tateno, K.; Sogawa, T.; Nakano, H. // Journal of Applied Physics;Jan2008, Vol. 103 Issue 1, p014301 

    The integration of III-V semiconductor materials with Si technology is of great interest for optoelectronic integration circuits. We have studied the growth and structural aspects of GaP nanowires (NWs) grown on Si substrate in a metalorganic vapor phase epitaxy system. Au colloid particles...

  • ON THE PROCESSING OF FINE MINERAL PARTICLES: A REVIEW. Anastasakis, G. // Journal of Ore Dressing;2014, Vol. 16 Issue 32, p1 

    The exploitation of ores with even lower grade has considerably reduced the liberation size of many mineral commodities, and increased the need both for fine grinding and for efficient separation techniques of fines. Conventional methods have limited success or fail to process fines, especially...

  • The mutual promotional effect of Au–Pd bimetallic nanoparticles on silicon nanowires: A study of preparation and catalytic activity. Mingwang Shao; Hong Wang; Mingliang Zhang; Dorothy Duo Duo Ma; Shuit-Tong Lee // Applied Physics Letters;12/15/2008, Vol. 93 Issue 24, p243110 

    Au–Pd nanoparticles were synthesized on the surface of silicon nanowires and used in the degradation of the p-nitroaniline, which exhibited the mutual promotional effect compared with Au/Si and Pd/Si catalysts. This synergistic effect factor was calculated as 2.35. The Au–Pd/Si...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics