Microscopic simulation of nonequilibrium features in quantum-well pumped semiconductor disk lasers

Kühn, Eckhard; Koch, Stephan W.; Thränhardt, Angela; Hader, Jörg; Moloney, Jerome V.
February 2010
Applied Physics Letters;2/1/2010, Vol. 96 Issue 5, p051116
Academic Journal
A microscopically motivated nonequilibrium theory is applied to study the power characteristics of an in-well pumped vertical external cavity surface emitting Laser for varying pump energies. Dynamic simulations yield steady state nonequilibrium carrier distributions resulting in gain reduction due to kinetic hole burning. Pauli blocking effects become prominent for more resonant pumping and increased pump powers. The reduced pump absorption results in a sublinear input-output power characteristics even for the optimized case where heating of the active mirror plays no role.


Related Articles

  • Ring cavity induced threshold reduction in single-mode surface emitting quantum cascade lasers. Mujagić, Elvis; Nobile, Michele; Detz, Hermann; Schrenk, Werner; Jianxin Chen; Gmachl, Claire; Strasser, Gottfried // Applied Physics Letters;1/18/2010, Vol. 96 Issue 3, p031111 

    We present ring cavity surface emitting (RCSE) quantum cascade lasers operating at temperatures as high as 380 K and above. A reduction in threshold current density and enhanced radiation efficiency are observed as compared to Fabry–Pérot (FP) lasers. In continuous wave, the maximum...

  • A numerical study of characteristic temperature of short-cavity 1.3-μm AlGaInAs/InP MQW lasers. Hsieh, S.-W.; Kuo, Y.-K. // Applied Physics A: Materials Science & Processing;Feb2006, Vol. 82 Issue 2, p287 

    Optical properties of a 1.3-μm AlGaInAs/InP strained multiple quantum-well structure with an AlInAs electron stopper layer, which is located between the active region and the p-type graded-index separate confinement heterostructure layer, are studied numerically with a LASTIP simulation...

  • Wafer-Fused Optically Pumped VECSELs Emitting in the 1310-nm and 1550-nm Wavebands. Sirbu, A.; Volet, N.; Mereuta, A.; Lyytik� inen, J.; Rautiainen, J.; Okhotnikov, O.; Walczak, J.; Wasiak, M.; Czyszanowski, T.; Caliman, A.; Zhu, Q.; Iakovlev, V.; Kapon, E. // Advances in Optical Technologies;2011, p1 

    1300-nm, 1550-nm, and 1480-nm wavelength, optically pumped VECSELs based on wafer-fused InAlGaAs/InP-AlGaAs/GaAs gain mirrors with intracavity diamond heat spreaders are described. These devices demonstrate very low thermal impedance of 4 K/W. MaximumCWoutput of devices with 5 groups of quantum...

  • High performance optically pumped antimonide lasers operating in the 2.4–9.3 μm wavelength range. Kaspi, R.; Ongstad, A. P.; Dente, G. C.; Chavez, J. R.; Tilton, M. L.; Gianardi, D. M. // Applied Physics Letters;1/23/2006, Vol. 88 Issue 4, p041122 

    We provide an update on the further development of optically pumped semiconductor lasers based on the InAs/InGaSb/InAs type-II quantum wells. We show increased power generation, as well as the inherent flexibility to produce devices that can emit at any wavelength in the ∼2.4 μm to...

  • VECSEL emits two coaxial beams at different wavelengths.  // Laser Focus World;Jul2005, Vol. 41 Issue 7, p11 

    Reports on the discovery of a vertical external-cavity surface-emitting laser that emits two different wavelengths simultaneously at about the same optical power from a single cavity, by researchers at the Optoelectronics Research Centre at the Tampere University of Technology in Tampere,...

  • Continuous-wave operation of distributed feedback interband cascade lasers. Yang, Rui Q.; Hill, C.J.; Yang, B.H.; Wong, C.M.; Muller, R.E.; Echtermach, P.M. // Applied Physics Letters;5/3/2004, Vol. 84 Issue 18, p3699 

    Continuous-wave distributed feedback interband cascade lasers operating near 3.3 μm are reported. Single longitudinal mode emission is achieved with side mode suppression ratio greater than 30 dB at temperatures up to 175 K. A clear Bragg stop band in the laser emission spectrum indicates a...

  • Exciton spin relaxation in In0.53Ga0.47As/AlAs0.56Sb0.44 quantum wells. Sasayama, K.; Nakanishi, S.; Yamaguchi, R.; Oyanagi, Y.; Ushimi, T.; Gozu, S.; Mozume, T.; Tackeuchi, A. // Applied Physics Letters;2/27/2012, Vol. 100 Issue 9, p092401 

    The spin relaxation process of In0.53Ga0.47As/AlAs0.56Sb0.44 quantum wells is investigated by spin-dependent pump and probe reflectance measurements with a high time resolution of 200 fs. The observed spin relaxation time of 17.5 ps at 20 K indicates high potential for applications to high-speed...

  • Structural dependence of carrier capture time in semiconductor quantum-well lasers. Hader, J.; Moloney, J.V.; Koch, S.W. // Applied Physics Letters;7/19/2004, Vol. 85 Issue 3, p369 

    A fully microscopic model based on generalized quantum Bolzman equations for electron–electron and electron–phonon scattering is used to calculate the carrier capture dynamics in quantum-well lasers. The capture time and dynamics are governed by transitions between quantum states...

  • Double-band generation in quantum-well semiconductor laser at high injection levels. Vinokurov, D. A.; Zorina, S. A.; Kapitonov, V. A.; Leshko, A. Yu.; Lyutetskiǐ;, A. V.; Nalet, T. A.; Nikolaev, D. N.; Pikhtin, N. A.; Rudova, N. A.; Slipchenko, S. O.; Sokolova, Z. N.; Stankevich, A. L.; Fetisova, N. V.; Khomylev, M. A.; Shamakhov, V. V.; Borshchev, K. S.; Arsent'ev, I. N.; Bondarev, A. D.; Trukan, M. K.; Tarasov, I. S. // Semiconductors;Oct2007, Vol. 41 Issue 10, p1230 

    Spectral and emission-power characteristics of semiconductor lasers based on quantum-dimensional asymmetric heterostructures with separate confinement in a system of InGaAs/GaAs/AlGaAs alloys are studied in the case of high pump levels in the pulsed mode of lasing (200 A, 100 ns, and 10 kHz). It...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics