Effect of boron on interstitial-related luminescence centers in silicon

Charnvanichborikarn, S.; Villis, B. J.; Johnson, B. C.; Wong-Leung, J.; McCallum, J. C.; Williams, J. S.; Jagadish, C.
February 2010
Applied Physics Letters;2/1/2010, Vol. 96 Issue 5, p051906
Academic Journal
Photoluminescence measurements have been used to investigate the optically active defect centers formed by silicon implantation and a subsequent anneal at 275, 400, or 525 °C. The presence of boron in p-type silicon is found to produce deleterious effects on the luminescence of the interstitial-related W- and X-centers as well as a lower energy broad luminescence band. This effect has not been previously reported but it is consistent with the suppression of interstitial-related {311} extended defect formation in the presence of high boron concentrations at higher annealing temperatures. The results presented in this letter provide insight into the role of boron in the initial stages of interstitial cluster formation.


Related Articles

  • Dislocation-related photoluminescence from processed Si. Misiuk, Andrzej; Zhuravlev, Konstantin S.; Jung, Wojciech; Prujszczyk, Marek; Steinman, Edward A. // Journal of Materials Science: Materials in Electronics;Oct2008 Supplement 1, Vol. 19, p243 

    Dislocation-related photoluminescence (PL) from oxygen containing Czochralski silicon (Cz-Si) processed at up to 1,400 K (HT) under atmospheric and enhanced Ar pressures (HP, up to 1.2 GPa) has been investigated. Appropriate processing of Cz-Si results in a creation of oxygen precipitates and of...

  • The role of donor-acceptor pairs in the excitation of Eu-ions in GaN:Eu epitaxial layers. Mitchell, B.; Poplawsky, J.; Lee, D.; Koizumi, A.; Fujiwara, Y.; Dierolf, V. // Journal of Applied Physics;2014, Vol. 115 Issue 20, p204501-1 

    The nature of Eu incorporation and resulting luminescence efficiency in GaN has been extensively investigated. By performing a comparative study on GaN:Eu samples grown under a variety of controlled conditions, and using a variety of experimental techniques, the configuration of the majority...

  • Detection of singlet oxygen in photoexcited porous silicon nanocrystals by photoluminescence measurements. Gongalsky, M. B.; Konstantinova, E. A.; Osminkina, L. A.; Timoshenko, V. Yu. // Semiconductors;Jan2010, Vol. 44 Issue 1, p89 

    Luminescence of gas-phase singlet oxygen optically sensitized by microporous silicon at room temperature is detected for the first time. At the same time, a photoinduced increase in the photoluminescence intensity of defects at the sample surface in oxygen atmosphere is observed. It is shown...

  • IR luminescence in thermally treated silicon. Bolotov, V. V.; Kang, V. E. // Semiconductors;Jan2009, Vol. 43 Issue 1, p26 

    Near-edge IR luminescence with peak emission at E = 1.084 eV has been studied in n- and p-type silicon samples with different contents of interstitial oxygen under excitation with a Nd: YAG laser diode. Thermal treatments of the samples demonstrated that the luminescence nearly completely...

  • Long-lifetime emission in luminescent colloidal silica. Soriano, Ronald B.; Kpatcha, Essoyodou; Jakob, Adam M.; Merkert, Jon W.; Carlin, Clifford M.; Schmedake, Thomas A. // Applied Physics Letters;8/27/2007, Vol. 91 Issue 9, p091909 

    Calcination of aminopropylsilica spheres generates colloidal silica with tailorable luminescence properties depending on the calcination conditions. After calcining at 550 °C for 20 h, photoexcited luminescent colloidal silica exhibits a bright blue emission (λmax=375 nm, 3.3 eV) followed...

  • Correlation between surface composition and luminescence of nanocrystalline silicon particles dispersed in pure water. Hiruoka, Masaki; Sato, Keisuke; Hirakuri, Kenji // Journal of Applied Physics;7/15/2007, Vol. 102 Issue 2, p024308 

    The stability of the luminescene of nanocrystalline silicon (nc-Si) particles passivated with a number of different elements, including hydrogen, carbon, and oxygen, has been investigated in pure water. Each sample emitted red light with a peak wavelength in the range of 740–800 nm. The...

  • Intrinsic defects in ZnO and GaN crystals. Rogozin, I.; Marakhovskii, A. // Journal of Applied Spectroscopy;Nov2005, Vol. 72 Issue 6, p833 

    The kinetics of defect formation in the system of a crystal with a nonmetal component in the activated gas phase has been investigated. The data obtained has made it possible to develop physicochemical methods of regulating the defect-formation processes depending on the...

  • Luminescent nanobeads for optical sensing and imaging of dissolved oxygen. Borisov, Sergey; Klimant, Ingo // Microchimica Acta;Jan2009, Vol. 164 Issue 1/2, p7 

    A variety of luminescent oxygen nanosensors were prepared by addressable staining of poly(styrene-block-vinylpyrrolidone) nanobeads with metal–ligand complexes whose luminescence is quenched by oxygen. They display optimal sensitivity in responding to dissolved oxygen in concentrations...

  • Luminescence centers in cubic boron nitride. Shishonok, E. // Journal of Applied Spectroscopy;Mar2007, Vol. 74 Issue 2, p272 

    Complex and multiband photoluminescence spectra for GB and HBN centers in single crystals of cubic boron nitride (cBN) were recorded in the wavelength ranges 385–400 nm and 365–395 nm and the nature of these centers was studied. The use of models involving resonance vibrations and...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics