Effect of In incorporated into SbTe on phase change characteristics resulting from changes in electronic structure

Moon Hyung Jang; Seung Jong Park; Dong Heok Lim; Sung Jin Park; Mann-Ho Cho; Dae-Hong Ko; Heo, M. Y.; Hyun Chul Sohn; Sang-Ok Kim
February 2010
Applied Physics Letters;2/1/2010, Vol. 96 Issue 5, p052112
Academic Journal
The effects of the In content of InSbTe films with various stoichiometries (Sb2Te2.7, In0.5Sb2Te2.9, and In2.6Sb2Te2.9) on phase change characteristics were investigated. With increasing incorporation of In atoms into Sb2Te3, various crystalline phases, i.e., In2Te3, Sb, and In3SbTe2, were observed due to the bond energy between the constituent atoms, while only Sb2Te3 and the Sb2Te2 phases were observed in the case of Sb2Te2.7 and In0.5Sb2Te2.9 films. In addition, the shifts in binding energy of the Sb 3d and In 3d peaks in x-ray photoelectron spectra after the annealing treatment were directly related to the amount of incorporated In. The observed changes in electronic structure suggest that the changes in electrical conductivity and crystalline phase are directly related to the extent of In incorporation.


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