Evidence of Al induced conducting filament formation in Al/amorphous silicon/Al resistive switching memory device

Jung Won Seo; Seung Jae Baik; Sang Jung Kang; Yun Ho Hong; Ji-Hwan Yang; Liang Fang; Koeng Su Lim
February 2010
Applied Physics Letters;2/1/2010, Vol. 96 Issue 5, p053504
Academic Journal
We demonstrated that an Al/p-type amorphous silicon (p-a-Si)/Al switching device exhibits stable, nonvolatile resistive switching characteristics as well as reliable data retention at 85 °C. It is directly observed that the conducting filament is created after electroforming and incorporates the top metal migrated or diffused into a-Si layer. In addition, by analyzing the constitution of the conducting filament, we investigated the microscopic nature of the conducting filament. These results suggest that the Al/p-a-Si/Al device has potential for future nonvolatile memory applications.


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