Effect of V/III flux ratio on luminescence properties and defect formation of Er-doped GaN

Shaoqiang Chen; Uedono, Akira; Ishibashi, Shoji; Tomita, Shigeo; Kudo, Hiroshi; Akimoto, Katsuhiro
February 2010
Applied Physics Letters;2/1/2010, Vol. 96 Issue 5, p051907
Academic Journal
Erbium-doped GaN samples grown with different V/III ratios through gas source molecular beam epitaxy were prepared to investigate the influence of the V/III ratio on the defect formation and the optical activity of the Er-related luminescence center. Obvious V/III ratio dependence was observed in photoluminescence measurement. Positron annihilation spectroscopy measurements suggested that VGa-VN vacancy-complexes formed in these samples and that the VN/VGa ratio depended on the V/III ratio. The generation of Er-VN defect complexes, which act as high optical active luminescence centers, is suggested as the cause of improved optical properties of Er-doped GaN grown with a lower V/III ratio.


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