TITLE

Observation of an electrically tunable exciton g factor in InGaAs/GaAs quantum dots

AUTHOR(S)
Klotz, F.; Jovanov, V.; Kierig, J.; Clark, E. C.; Rudolph, D.; Heiss, D.; Bichler, M.; Abstreiter, G.; Brandt, M. S.; Finley, J. J.
PUB. DATE
February 2010
SOURCE
Applied Physics Letters;2/1/2010, Vol. 96 Issue 5, p053113
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The electric field dependence of the exciton g factor and the fine structure splitting in self-assembled InGaAs/GaAs quantum dots grown via a flush-overgrowth technique is studied by photocurrent and photoluminescence experiments. Both the fine structure and the Zeeman splitting can be tuned over a wide range via electric fields applied in growth direction of the quantum dot. For the g factor, a tunability of 250% is demonstrated from g=0.12 to 0.42.
ACCESSION #
47929057

 

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