TITLE

In situ synchrotron x-ray studies of strain and composition evolution during metal-organic chemical vapor deposition of InGaN

AUTHOR(S)
Richard, M.-I.; Highland, M. J.; Fister, T. T.; Munkholm, A.; Mei, J.; Streiffer, S. K.; Thompson, Carol; Fuoss, P. H.; Stephenson, G. B.
PUB. DATE
February 2010
SOURCE
Applied Physics Letters;2/1/2010, Vol. 96 Issue 5, p051911
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Composition and strain inhomogeneities strongly affect the optoelectronic properties of InGaN but their origin has been unclear. Here we report real-time x-ray reciprocal space mapping that reveals the development of strain and composition distributions during metal-organic chemical vapor deposition of InxGa1-xN on GaN. Strong, correlated inhomogeneities of the strain state and In fraction x arise during growth in a manner consistent with models for instabilities driven by strain relaxation.
ACCESSION #
47929046

 

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