Electron cyclotron effective mass in indium nitride

Goiran, Michel; Millot, Marius; Poumirol, Jean-Marie; Gherasoiu, Iulian; Walukiewicz, Wladek; Leotin, Jean
February 2010
Applied Physics Letters;2/1/2010, Vol. 96 Issue 5, p052117
Academic Journal
We report on cyclotron effective mass measurement in indium nitride epilayers grown on c-sapphire, using the thermal damping of Shubnikov-de-Haas oscillations obtained in the temperature range 2–70 K and under magnetic field up to 60 T. We unravel an isotropic electron cyclotron effective mass equal to 0.062±0.002m0 for samples having electron concentration near 1018 cm-3. After nonparabolicity and polaron corrections we estimate a bare mass at the bottom of the band equal to 0.055±0.002m0.


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